
Information
- Designation : Assistant Professor
- Email : bijitchoudhuri@ece.nits.ac.in
- Phone :
Key Notes
- Journals: 48
- Book Chapters: 7
- Patents: 4
- PhD: Guided: 6
- Post Graduates: Guided: 1
55
PUBLICATIONS6
DOCTORAL STUDENTS4
PATENTSIntroduction [Biosketch]
- Dr. Bijit Choudhuri received B. E., M. Tech. and Ph.D. degree in 2010, 2013 and 2017 respectively all from NIT Agartala, India. His M.Tech thesis was on Indium Nanoparticles array/ TiO2 Thin Film based Plasmonic detector. The title of his Ph.D dissertation was Studies on glancing angle synthesized low dimensional TiO2 and its heterostructures based optical detector.From July 2017 to July 2018, he was with the Department of Electronics and Communication Engineering, NIT Nagaland, India, as an Assistant Professor and from July 2018 to Nov 2018 with the Electronics and Communication Engineering, NIT Mizoram, India as a Temporary Faculty. He was with Dept of Physics, IIT Delhi as Senior Project Scientist from Nov 2018 to July 2019. From July, 2019 he is working with the Department of Electronics and Communication Engineering, NIT Silchar, India, as an Assistant Professor. His research interests include Non-classical MOSFET devices with low subthreshold swing, Flexible health monitoring device, Glancing angle deposition, Fabrication and characeterization of Plasmonic photodetector, Heterojunction photodetector, Schottky photodetector.
Areas of Interest
- Non-classical MOSFET devices with low subthreshold swing.
- Flexible health monitoring device, Glancing angle deposition.
- Fabrication and characeterization of Plasmonic photodetector, Heterojunction photodetector, Schottky photodetector.
Institution | Year | Degree |
---|---|---|
NIT Agartala | 2010 | B.E |
NIT Agartala | 2013 | M.Tech |
NIT Agartala | 2017 | Ph.D |
Teaching Experience
NIT Silchar
NIT Mizoram
NIT Nagaland
Industrial/Research Experience
IIT Delhi
Bijit Choudhuri, Parul Raturi, “Fabrication Of Gas Sensor Using Metal Oxide Semiconductor Nanostructures”, InAniruddha Mondal, Arindam Biswas, Hybrid Nanostructures as Solid-State Sensors for IoT, 2025, Taylor and Francis
Sl.No | Course Name | Semester | Course Code | Duration | Status |
---|---|---|---|---|---|
1 | Electronic Devices | B.Tech | EC-201 | 6 months | Completed |
2 | Advanced VLSI Design | B.Tech | EC-1432 | 6 months | Completed |
3 | Low Power VLSI Design | B.Tech | EC-1455 | 6 months | Completed |
4 | Electrical and Electronic Materials | B.Tech | EC-208 | 6 months | Completed |
5 | Optoelectronics and Fiber optics | B.Tech | EC-306 | 6 months | Completed |
6 | Electronic Devices | B.Tech | EC-201 | 6 months | Completed |
7 | Electrical and Electronic Materials | B.Tech | EC-208 | 6 months | Completed |
8 | Low Power VLSI Design | B.Tech | EC-1455 | 6 months | Completed |
9 | Electronic Devices | B.Tech | EC-201 | 6 months | Completed |
10 | Ananlog Circuits | B.Tech | EC-202 | 6 months | Completed |
11 | Electrical and Electronic Materials | B.Tech | EC-208 | 6 months | Completed |
12 | Low Power VLSI Design | B.Tech | EC-454 | 6 months | Completed |
13 | Nanoelectronic Devices and Materials for VLSI | B.Tech | EC-436 | 6 months | Completed |
14 | Electronic Devices | B.Tech | EC-201 | 6 months | Completed |
15 | Basic Electronics | B.Tech | EC-101 | 6 months | Completed |
16 | VLSI Technology | M.Tech | EC-5213 | 6 months | Completed |
17 | Electronic Devices | M.Tech | EC-201 | 6 months | Completed |
18 | Basic Electronics | B.Tech | EC-101 | 6 months | Completed |
19 | Nanotechnology | B.Tech | EC-384 | 6 months | Completed |
20 | Low Power VLSI Design | B.Tech | EC-454 | 6 months | Completed |
21 | Electronic Devices | B.Tech | EC-201 | 6 months | Completed |
22 | Basic Electronics | B.Tech | EC-101 | 6 months | Completed |
23 | Low Power VLSI Design | B.Tech | EC-454 | 6 months | Ongoing |
24 | Basic Electronics | B.Tech | EC-101 | 6 months | Ongoing |
Enabling Gate Level Simulation at IP and SOC Level
Khan Abdulkaleem Abdulquyyaum18-2-4-11
Enrolled: 15 July 2018
Completed :
26 May 2020
Modelling, Simulation and Applications of Highly Doped Double Pocket Double Gate Negative Capacitance Field Effect Transistor (HDDP-DG-NCFET)
Malvika
Enrolled: 19 July 2019
Completed :
23 July 2024
Supervisor : Dr. M. Kavicharan
Co Supervisor : Dr. Bijit Choudhuri
Design, simulation, and performance analysis of pocket-doped source-all-around vertical tunnel FETs and their applications
Potharaju Ramesh
Enrolled: 25 August 2020
Completed :
13 August 2024
Supervisor : Dr. Bijit Choudhuri
Dual Material Double Gate Graphene Nanoribbon Vertical Tunnel FETs: Gas sensor and Circuit level Applications
Zohmingliana
Enrolled: 19 August 2020
Completed :
26 July 2024
Supervisor : Dr. Brinda Bhowmick
Co Supervisor : Dr. Bijit Choudhuri
Design and simulation of of Low voltage organic/inorganic devices
Brahmaiah Battula
Enrolled: 21 August 2021
Ongoing
Supervisor : Dr. Bijit Choudhuri
Modelling, Simulation and Applications of vertical tunnel FET
Swapna Bharali
Enrolled: 12 August 2020
Ongoing
Supervisor : Dr. Bijit Choudhuri
Co Supervisor : Dr. Brinda Bhowmick
Design and simulation of Solar Cell
Prasenjit Chakma
Enrolled: 21 January 2025
Ongoing
Supervisor : Dr. Bijit Choudhuri
Co Supervisor : Dr. Himanshu Karan
Awards And Honours
- 1. MHRD Scholarship during M.Tech (2011-2013) and Ph.D (2013-2017).
- 2. Elevated to IEEE Senior Member in 2023.
- 3. Reviewer for the following journals:
- • Scientific Reports
- • IEEE Electron Device Letters
- • IEEE Transaction on Electronic Devices.
- • IEEE Transaction on Nanotechnology.
- • IEEE Sensor Journal.
- • IEEE Journal of Photovoltaics.
- • Journal of Crystal Growth.
- • Applied Physics A
- • Plasmonics
- • Applied Nanoscience
- • International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
- • Optical Materials.
- • Optics.
- • AIP Advances.
- • Materials Today.
- • Microsystem Technologies.
- • Automatika: Journal for Control, Measurement, Electronics, Computing and Communications
- • AIMS Electronics and Electrical Engineering
- • Journal of Porous Materials.
- • Indian journal of pure and applied physics
- • Journal of Korean Physical Society
Flexible Gel-Less Antibacterial Electrodes, Method for Manufacturing and System Deploying said Electrodes for Cardiac Monitoring
“A SYSTEM FOR STUDYING AND PERFORMING THE PART-OF-SPEECH TAGGING FOR MIZO LANGUAGE”
India
Patent
Registration ID, 202011029896 A
Flexible Gel-Less Antibacterial Electrodes, Method for Manufacturing and System Deploying said Electrodes for Cardiac Monitoring, (**GRANTED**)
A Device for Designing and Analysing Double Gate Dual Material Vetical Nano ribbon Graphene TFET
“A SYSTEM FOR STUDYING AND PERFORMING THE PART-OF-SPEECH TAGGING FOR MIZO LANGUAGE”
REPUBLIC OF SOUTH AFRICA
Patent
Registration ID, 2022/10999
A Device for Designing and Analysing Double Gate Dual Material Vetical Nano ribbon Graphene TFET, (**GRANTED**)
A gate underlap lightlydoped drain and raised drain negative-capacitance field-effect transistor device and its fabrication method thereof
“A SYSTEM FOR STUDYING AND PERFORMING THE PART-OF-SPEECH TAGGING FOR MIZO LANGUAGE”
India
Patent
Registration ID, 202431063984 A
A gate underlap lightlydoped drain and raised drain negative-capacitance field-effect transistor device and its fabrication method thereof, (**GRANTED**)
3-dimensional cylindrical ferroelectric based negative capacitance gate-all-around FET silicon-nanowire device for low power applications
“A SYSTEM FOR STUDYING AND PERFORMING THE PART-OF-SPEECH TAGGING FOR MIZO LANGUAGE”
Republic of South Africa
Patent
Registration ID, 2024/05816
3-dimensional cylindrical ferroelectric based negative capacitance gate-all-around FET silicon-nanowire device for low power applications, (**GRANTED**)