Dr. Himanshu Karan

July 19, 2022 by Himanshu Karan
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Himanshu Karan_PhotoAssistant Professor

Electronics and Communication Engineering

National Institute of Technology Silchar

Phone: +91-9732003148
Date of Joining: 15/07/2022
Academic Experience: 6+ months
Personal Webpage: http://ec.nits.ac.in/himanshukaran/
Email: himanshu@ece.nits.ac.in

ACADEMIC QUALIFICATIONS (FULL DETAILS)

B.E. (2007-2011): University Institute of Technology, University of Burdwan
M.Tech. (2011-2013): Institute of Radio Physics & Electronics, University of Calcutta
Ph.D. (2013-2020): Institute of Radio Physics & Electronics, University of Calcutta
PDF (February, 2022- July, 2022): Indian Institute of Technology, Bombay

EXPERIENCE

  • July 2022 – Till date: Assistant Professor, National Institute of Technology (NIT) Silchar, Assam, 788010, India.
  • February 2022 – July 2022: Postdoctoral Research Scientist, Indian Institute of Technology, Bombay, India.
  • February 2020 – January 2022: Senior Research Fellow (DST-PURSE) (Postdoc), University of Calcutta, India.
  • November 2015 – February 2020: Senior Research Fellow (UGC, Govt. of India), Institute of Radio Physics & Electronics, University of Calcutta.
  • November 2013 – November 2015: Senior Research Fellow (SERB Project), Institute of Radio Physics & Electronics, University of Calcutta.
  • June 2013 – October 2013: Assistant Professor, Swami Vivekananda Institute of Science and Technology, Kolkata, 700145, India.

AREA OF INTEREST AND SPECIALIZATION

  1. Photonics and Optoelectronics Devices
  2. Nanoelectronics Devices
  3. Nitride Based LED, LASER and Solar Cell

SHORT BIOGRAPHICAL SKETCH

Dr. Himanshu Karan received the B. E. degree in Electronics and Communications Engineering from University Institute of Technology, University of Burdwan, India, the M. Tech. degree in Radio Physics & Electronics from the University of Calcutta, India. He received the Ph.D. degree in the specialization of Semiconductor Physics and Optoelectronic Devices from Institute of Radio Physics & Electronics, University of Calcutta, India, in 2020. He was with the department of Electrical Engineering, IIT Bombay, as a Postdoctoral Research Scientist. Currently, he is working as an Assistant Professor in the department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam, India. He has publications in peer-reviewed journals and conferences. His research interests include Semiconductor Physics and Optoelectronic Devices, Photonics Devices, Nanoelectronics Devices and Nitride Based LED, LASER, Solar Cell.

PROJECT(S)

BOOKS/CHAPTERS

  1. H. Karan and A. Biswas, “Performance improvement of light-emitting diodes with W-shaped InGaN/GaN multiple quantum wells,” Communication, Devices, and Computing. Lecture Notes in Electrical Engineering (Springer), vol. 470, pp. 241-251, 2018.

PUBLICATION (JOURNALS)

  1. H. Karan and A. Biswas, “Improving performance of light-emitting diodes using InGaN/GaN MQWs with varying trapezoidal bottom well width,” Optik (Elsevier), vol. 247, pp. 167888, August, 2021.
  2. H. Karan, M. Saha and A. Biswas, “Step multiple quantum well enabled performance enhancement in InGaN/GaN based light-emitting diodes,” Microsystem Technologies (Springer), vol. 26, pp. 3055-3062, October, 2020. 
  3. H. Karan, M. Saha, A. Biswas and D. Biswas, “Analysis of luminescence spectra of rectangular and trapezoidal InGaN/GaN multiple quantum wells under varying bias conditions,” Optical Materials (Elsevier), vol. 86, pp. 247-255, December, 2018.
  4. H. Karan, A. Biswas and M. Saha, “Improved performance of InGaN/GaN MQW LEDs with trapezoidal  wells and gradually thinned barrier layers towards anode,” Optics Communications ( Elsevier ), vol. 400, pp. 89-95, May, 2017.
  5. M. Saha, A. Biswas and H. Karan, “Monolithic high performance InGaN/GaN white LEDs with a tunnel junction cascaded yellow and blue light-emitting structures,” Optical Materials (Elsevier), vol. 77, pp. 104-110, January, 2018.

PUBLICATION (CONFERENCES)

  1. H. Karan and A. Biswas, “Optical performance of light-emitting diodes using InGaN/GaN MQWs with various trapezoidal bottom base widths,” 8th International Conference on Microelectronics, Circuits and Systems (MICRO), May 8-9, 2021 at Kolkata, India
  2. H. Karan and A. Biswas, “Performance improvement of light-emitting diodes with W-shape InGaN/GaN multiple quantum wells,” 1st International Conference on Communication, Devices and Computing (ICCDC), November 2-3, 2017 at Haldia Institute of Technology, Haldia, West Bengal, India. 
  3. H. Karan, M. Saha and A. Biswas, “Improved performance of InGaN/GaN based light-emitting diodes with step multiple quantum well structures,” 4th International Conference on Microelectronics, Circuits and Systems (MICRO), June 3-4, 2017 at Darjeeling, West Bengal, India.

PROFESSIONAL MEMBERSHIPS

AWARDS & RECOGNITIONS

  • Postdoctoral Research Scientist at the IIT Bombay (2022).
  • Senior Research Fellowship under DST-PURSE Program under the University of Calcutta (2020).
  • Senior Research Fellowship, UGC, Govt. of India (2014).
  • Senior Research Fellowship under SERB funded project at the University of Calcutta (2013).
  • GATE Fellowship (2010).

ADMINISTRATIVE RESPONSIBILITY

Ph.D. Scholars

  1. Mr. Muneshwar Kumar (Ongoing)
  2. Mr. Srinivas Mattaparthi (Ongoing)

M.Tech. Scholars

  1. Mr. Suhas S Kashyap (Ongoing)

B.Tech. Projects

  1. Mr. Karuna Rabha (Completed)
  2. Mr. Manas Jyoti Roy (Completed)

Workshops Organized

 Conferences Organized

 Invited Talks

  1. Invited Talk on “Nitride based light-emitting diodes”  3rd International Conference IEMPOWER 2022, Organized by IEM Kolkata, 17-19 November 2022.