Dr. Rajesh Saha

November 29, 2023 by Rajesh Saha
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Photo(1)Assistant Professor

Department of Electronics and Communication Engineering

National Institute of Technology Silchar

Silchar, Assam-788010, India

Email: rajesh@ece@nits.ac.in

Phone: 9957880236
Date of Joining: 21/11/2023
Academic Experience: 5+years
Personal Webpage: http://ec.nits.ac.in/rsaha/

ACADEMIC QUALIFICATIONS

Ph.D.(Advanced MOS Devices) from NIT Silchar (2018)

M.Tech.(Mobile Comm. & Computing) from NIT Arunachal Pradesh(2015)

B.E.(Electronics & Telecomm. Engg.) from Assam Engineering College(2012)

TEACHING/RESEARCH EXPERIENCE

Assistant Professor at NIT Silchar, Assam-788010, India [21 Nov. 2023 – Present]

Assistant Professor at MNIT Jaipur, Rajasthan-302017, India [27 Feb. 2020 – 20 Nov. 2023]

Assistant Professor at VIT AP University, Amaravati-522237, India [09 May 2018 – 26 Feb. 2020]

Research Associate at NIT Silchar, Assam-788010, India [05 March 2018 – 30 April 2018]

AREA OF INTEREST AND SPECIALIZATION

1. Modeling and Simulation Nano Devices

2. Application of Nano Devices

3. Semiconductor Material

SHORT BIOGRAPHICAL SKETCH

Rajesh Saha Assistant Professor in the Department of Electronics and Communication Engineering, National Institute of Technology Silchar. Before joining NIT Silchar, he has worked as Assistant Professor at MNIT Jaipur from February 2020 to November 2023 and School of Electronics Engineering, VIT AP University, from May 2018 to February 2020. He has received B.E. with honours in Electronics and Telecommunication Engineering from Assam Engineering College, Guwahati, Assam in 2012 and M. Tech. in Mobile Communication and Computing from NIT Arunachal Pradesh, Yupia, in 2015. He has received Ph.D. in Electronics and Communication from NIT Silchar, Assam in 2018. His research interest includes Modeling and Simulation of Nanoelectronics Devices, Biosensors.

PROJECT(S)

1. PI: SERB DST, Research Project titled “Impact of Lateral Straggle on the Logic Gates, SRAM, and Ring Oscillator in Silicon on Insulator (SOI) Tunnel FET”, 23.08 lakhs, 2019-2022.

PATENTS

1. Germany patent Granted ( Inventors: Ravindra Kumar Maurya, Brinda Bhowmick, Rajesh Saha) Title: A System for Developing and Analyzing a Parameter of Bohm Quantum Potential (BQP) Device”  No.202022105580 in 2022.

2. Indian patent filed and Published ( Inventors:Brinda Bhowmick, Rajesh Saha, Siddhartha Singh, Utkarsh Bhatt) on Portable system for fast detection of PQRS and T wave ECG signals, application no.201931027301 dated 8/7/2019

PUBLICATION:

International Journals:

2024

  1. S. Rai, S. Tiwari, R. Chaudhary, R. Saha, and R. Sharma, ” Investigation on electrical parameters between single and double material gate nanoribbon FETs including trap distributions”,  Materials Science and Engineering: B, vol. 303, pp. 117326, 2024, https://doi.org/10.1016/j.mseb.2024.117326
  2. R. K. Maurya, V. Kumar, R. Saha, and B. Bhowmick, ” Effects of the remnant polarization on the electrical characteristics of steeper sub-threshold swing Fe-GeFinFET “, Materials Science and Engineering: B, vol. 303, pp. 117317, 2024, doi: https://doi.org/10.1016/j.mseb.2024.117317
  3. R. Chaudhary, R. Saha, and M. Yadav, ” Analysis of Thermal Stability in Underlap and Overlap DMG FinFETs including Self-Heating Effects”, Microelectronics Journal, 106152, 2024,  https://doi.org/10.1016/j.mejo.2024.106152
  4. R. K. Maurya, R. G. Debnath, R. Saha, and B. Bhowmick, ” Enhanced Magnetic Field Sensing with MAGNC-FinFET: A Current Mode Hall Effect Approach”, IEEE Transactions on Nanotechnology, doi: 10.1109/TNANO.2024.3373035
  5. N. Harsha, S. Tiwari, R. Chaudhary, and R. Saha, “Performances of gate stacked heterojunction SELBOX and SOI tunnel FETs including interface trap charges: A simulation study ” Materials Science and Engineering: B, vol. 300, pp. 117115, 2024, doi: 10.1016/j.mseb.2023.117115
  6. P. S. Das, D. Deb, R. Goswami, S. Sharma, and R Saha, ” Fin core dimensionality and corner effect in dual core gate-all-around FinFET “, Microelectronics Journal, vol. 143, pp. 105985, 2024, doi: 10.1016/j.mejo.2023.105985
  7. R. Chaudhary and R. Saha, “Quality factor and digital inverter performance in gate underlap and overlap DMG FinFETs “, Materials Science and Engineering: B, vol. 299, pp. 116991, 2024, doi: 10.1016/j.mseb.2023.116991
  8. S. Tiwari and R. Saha, “Sensitivity analysis of TMD TFET based photo-sensor for visible light detection: A simulation study “, Microelectronics Journal, vol. 143, pp. 106035, 2024, doi: 10.1016/j.mejo.2023.106035
  9. R. Chaudhary and R. Saha, ” Analysis on the impact of interface Trap distributions on SOI DMG FinFETs: Overlap/underlap configurations”, Micro and Nanostructures, vol.  185, pp. 207725, 2024, doi: 10.1016/j.micrna.2023.207725

2023

  1. R Chaudhary and R Saha, ” Physical insights of interface traps and self-heating effect on electrical response of DMG FinFETs in overlap and underlap configurations: analog/RF perspective”, Phys. Scr, vol. 99, pp. 015406, 2024, doi: 10.1088/1402-4896/ad16b0
  2. Y. Sharma, L. Vijay, A. Kumari, Muskan, S. Tiwari, and R Saha, “Comparison study of RF/analog and linearity performance of dual material gate graphene source vertical TFET (DMG-GR-VTFET) and single material gate GR-VTFET”, Phys. Scr., vol. 99, pp. 015407, 2024, DOI 10.1088/1402-4896/ad16c5.
  3. S. Tiwari  and Rajesh Saha, “Switching and photosensitive analysis of dopingless tunnel field effect transistor based on cladding layer concept ” , Micro and Nanostructures, vol. 184, pp. 207673, 2023, DOI: https://doi.org/10.1016/j.micrna.2023.207673
  4. S. Tiwari and R. Saha, “Photo sensing Analysis of T-shape TFET sensor under visible range of spectrum” , Physica Scripta (IOP) Volume :0 / / 2023 DOI: 10.1088/1402-4896/acfc77
  5. Ravindra Kumar Maurya, Rajesh Saha, and Brinda Bhowmick, “Low to high-frequency noise behavior investigation of steeper sub-threshold swing NC-GeFinFET” , Microelectronics Journal (Elsevier) Volume :131 / / 2023 DOI: https://doi.org/10.1016/j.mejo.2022.105642
  6. Shreyas Tiwari, Lobzang Chonzom, and Rajesh Saha, “Optical FOMs of extended-source DG-TFET photodetector in the visible range of the spectrum” , Semiconductor Science and Technology (IOP) Volume :38 / / 2023 DOI: 10.1088/1361-6641/acb508
  7. Pratyusha Nune, Santanu Mandal, Amit Saha, and Rajesh Saha, “A generic simple model of synaptic memristor with local activity for neuromorphic applications” , Journal of Computational Electronics (Springer ) Volume :Accepted / / 2023 DOI: https://doi.org/10.1007/s10825-023-02007-
  8. Rajesh Saha, Deepak Panda, and Rupam Goswami, “Dependence of RF/analog and linearity parameters on ferroelectric layer thickness in ferroelectric tunnel junction dual material double gate (FTJ-DMDG) TFET” , Ferroelectrics (Wiley) Volume :602 / 204-214 / 2023 DOI: https://doi.org/10.1080/00150193.2022.2149315
  9. Shreyas Tiwari and Rajesh Saha, “Optical Performance of Split-Source Z-Shaped Horizontal-Pocket and Hetero-Stacked TFET-Based Photosensors” , Journal of Electronics Material (Springer) Volume :52 / / 2023 DOI: https://doi.org/10.1007/s11664-022-10140-9
  10. Rajesh Saha, Deepak Kumar Panda, and Rupam Goswami, “Investigation on RF/Analog Performance in SiGe Pocket n-Tunnel FET” , IETE Journal of Research (Wiley) Volume :Accepted / / 2023 DOI: https://doi.org/10.1080/03772063.2023.2181227
  11. Rashi Chaudhary and Rajesh Saha, “Impact of self-heating on RF/analog and linearity parameters of DMG FinFETs in underlap and overlap configurations” , Microelectronics Journal (Elsevier) Volume :135 / / 2023 DOI: https://doi.org/10.1016/j.mejo.2023.105765
  12. Shreyas Tiwari and Rajesh Saha, “Trap Sensitivity of Splitted Source Z Shape Horizontal Pocket and Hetero Stack TFETs: A Simulation Study” , Physica Scripta (IOP) Volume :Accepted / / 2023 DOI: 10.1088/1402-4896/acc6fd
  13. Shreyas Tiwari and Rajesh Saha , “Sensitivity analysis of Horizontal pocket N-TFET based biosensor considering repulsive steric effects” , Materials Science and Engineering: B (Elsevier) Volume :296 / / 2023 DOI: https://doi.org/10.1016/j.mseb.2023.116620
  14. Ravindra Kumar Maurya, Vivek Kumar, Rajesh Saha, and Brinda Bhowmick , “Effect of curie temperature on electrical parameters of NC-FinFET and digital switching application of NC-FinFET” , Microelectronics Journal (Elsevier) Volume :139 / / 2023 DOI: https://doi.org/10.1016/j.mejo.2023.105892
  15. Rajesh Saha, Rupam Goswami, and Shanidul Hoque, “Investigation on Effect of Interface Trap Charges and Temperature in Gate Overlap Graphene Source Step Shape Double Gate Tunnel FET” , ECS Journal of Solid State Science and Technology (IoP) Volume : 12 / 083004 / 2023 DOI: 10.1149/2162-8777/acec10
  16. Khan Abdulkarim Abdulquyyaum, Shreyas Tiwari, Rajesh Saha, Shandiul Hoque, ” Sensitivity extraction of step shape double gate (SSDG) TFET biosensor considering non-ideal scenario” , Engineering Research Express (IOP) Volume :5 / 035049 / 2023 DOI: 10.1088/2631-8695/acf18a
  17. Shreyas Tiwari and Rajesh Saha, “Sensitivity Analysis of I-shape TFET Biosensor Considering Repulsive Steric and Trap Effects” , IEEE Transactions on Nanotechnology (IEEE) Volume :NA / / 2023 DOI: 10.1109/TNANO.2023.3309411
  18. Lakshmi Nivas Teja, Rashi Chaudhary, Shreyas Tiwari, Rajesh Saha, “Reliability study of nano ribbon FET with temperature variation including interface trap charges” , Materials Science and Engineering: B (Elsevier) Volume :298 / / 2023 DOI: https://doi.org/10.1016/j.mseb.2023.116877
  19. S. Tiwari and R. Saha, “Switching and photosensitive analysis of dopingless tunnel field effect transistor based on cladding layer concept” , Micro and Nanostructures (Elsevier) (Elsevier) Volume :184 / / 2023 DOI: https://doi.org/10.1016/j.micrna.2023.207673
  20. Rajesh Saha, Rupam Goswami, Brinda Bhowmick, Srimanta Baishya, “Simulation study of n+ pocket step shape heterodielectric double gate tunnel FET for switching and biosensing applications” , Materials Science and Engineering: B (Elsevier) Volume :293 / 116491 / 2023 DOI: 10.1016/j.mseb.2023.116491

2022

  1. Shreyas Tiwari and Rajesh Saha, “Improved optical performance in near visible light detection photosensor based on TFET” , Microelectronics Journal (Elsevier) Volume :in press / 105554 / 2022 DOI: https://doi.org/10.1016/j.mejo.2022.105554
  2. R. Saha, R. Goswami, B. Bhowmick, and S. Baishya, “Comprehensive investigation on RF/analog parameters in ferroelectric tunnel FET” , Semiconductor Science and Technology (IOP) Volume :Accepted / 1-8 / 2022 DOI: 10.1088/1361-6641/ac3dd4
  3. D. Deb, R. Goswami, R. Baruah, R. Saha and K. Kandpal, “Role of gate electrode in influencing interface trap sensitivity in SOI tunnel FETs” , Journal of Micromechanics and Microengineering (IOP) Volume :32 / 044006 / 2022 DOI: https://doi.org/10.1088/1361-6439/ac56e8
  4. Jitendra Kumar, Rashi Chaudhary, Shreyas Tiwari and Rajesh Saha, “Comparison of RF/Analog and Linearity Performance of Various TFETs Using Source Engineering” , Silicon (Springer) Volume :Accepted / 1-8 / 2022 DOI: https://doi.org/10.1007/s12633-022-01868-4
  5. R Saha and C Sahu, “Influence of dielectric material near tunnel junction on analog/RF and linearity figure of merits in hetero dielectric (HG) TFET: A detailed study” , International Journal of RF and Microwave Computer Aided Design (Wiley) Volume :32 / 22915 / 2022 DOI: https://doi.org/10.1002/mmce.22915
  6. N. Reddy, D. K. Panda, and R. Saha, “Analytical modelling for surface potential of dual material gate overlapped-on-drain TFET(DM-DMG-TFET) for label-free biosensing application” , AEU – International Journal of Electronics and Communications (Elsevier) Volume :151 / 154225 / 2022 DOI: https://doi.org/10.1016/j.aeue.2022.154225
  7. D. Deb, R. Goswami, R. K. Baruah, K. Kandpal, and R. Saha, “Parametric investigation and trap sensitivity of n-p-n double gate TFETs” , Computers and Electrical Engineering (Elsevier) Volume :100 / 107930 / 2022 DOI: https://doi.org/10.1016/j.compeleceng.2022.107930
  8. Shreyas Tiwari and Rajesh Saha, “DC and RF/analog performances of split source horizontal pocket and hetero stack TFETs considering interface trap charges: A simulation study” , Microelectronics Reliability (Elsevier) Volume :137 / 114780 / 2022 DOI: https://doi.org/10.1016/j.microrel.2022.114780
  9. A. Magla, R. Saha, and R. Goswami, “Impact on performance of dual stack hetero- gated dielectric modulated TFET biosensor due to Si1-xGex pocket variation” , Microelectronics Journal (Elsevier) Volume :in press / / 2022 DOI: https://doi.org/10.1016/j.mejo.2022.105603
  10. Rajesh Saha, Deepak Kumar Panda, and Rupam Goswami,, “Analysis on electrical parameters including temperature and interface trap charges in gate overlap Ge source step shape double gate TFET” , Microelectronics Journal (Elsevier) Volume :130 / 105629 / 2022 DOI: https://doi.org/10.1016/j.mejo.2022.105629
  11. Shreyas Tiwari and Rajesh Saha, “Electrical Noise Analysis of Z Shape Horizontal Pocket and Hetero Stack TFETs under Trap Distribution” , ECS Journal of Solid State Science and Technology (IOS Press) Volume :0 / / 2022 DOI: 10.1149/2162-8777/acab85

2021

  1. Shreyas Tiwari and Rajesh Saha, “Methods to Reduce Ambipolar Current of Various TFET Structures: a Review” , SILICON (Springer ) Volume :Accepted / 1-8 / 2021 DOI: 10.1007/s12633-021-01458-w
  2. Yash Hirpara and R. Saha, “TCAD Simulation Study on Reliability issue of Heterojunction Heterodielectric FinFET: Effect of Interface Trap Charge, BOX Height, and Temperature” , Pramana – Journal of Physics (Springer ) Volume :Accepted / 1-10 / 2021 DOI: https://doi.org/10.1007/s12043-021-02210-0
  3. Rajesh Saha , Deepak Kumar Panda , Rupam Goswami, Brinda Bhowmick, Srimanta Baishya, “DC and RF/Analog Parameters in Ge-source SD-ZHP-TFET: Drain and Pocket Engineering” , International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Taylor & Francis) Volume :Accepted / 1-8 / 2021 DOI: https://doi.org/10.1002/jnm.2967
  4. R. Saha, B. Bhowmick, and S. Baishya, “Dependence of Lateral Straggle Parameter on DC, RF/Analog, and Linearity Performance in SOI FinFET” , IETE Journal of Research (Taylor & Francis) Volume :press / 1-7 / 2021
  5. Rajesh Saha, Rupam Goswami, Brinda Bhowmick, and Srimanta Baishya , “Performance Evaluation of Epitaxial Layer Based Gate Modulated TFET (GM-TFET)” , SILICON (Springer ) Volume :In press / 1-4 / 2021 DOI: https://doi.org/10.21203/rs.3.rs-732664/v1
  6. Rajesh Saha, Yash Hirpara, and Shanidul Hoque, “Sensitivity Analysis on Dielectric Modulated Ge-source DMDG TFET Based Label-Free Biosensor” , IEEE Transactions on Nanotechnology (IEEE) Volume :Accepted / 1-9 / 2021 DOI: 10.1109/TED.2017.2657233
  7. R. Saha, B. Bhowmick, and S. Baishya, “Hot Carrier Effect in Ferro-FinFET for variation in temperature, work function, and FE layer thickness” , Integrated Ferroelectrics (Taylor & Francis) Volume :221 / 1-8 / 2021 DOI: https://doi.org/10.1080/10584587.2021.1965842
  8. R. Saha, “Simulation Study on Ferroelectric Layer Thickness Dependence RF/Analog and Linearity Parameters in Ferroelectric Tunnel Junction TFET  ” , Microelectronics Journal (Elsevier) Volume :0 / 1-8 / 2021 DOI: 10.1016/j.mejo.2021.105081
  9. Rajesh Saha, Brinda Bhowmick, and Srimanta Baishya, “Study on Impact of Ferroelectric Layer Thickness on RF/Analog and Linearity Parameters in Ferroelectric-FinFET” , International Journal of RF and Microwave Computer-Aided Engineering (Taylor & Francis) Volume :0 / 1-15 / 2021 DOI: doi.org/10.1002/mmce.22704
  10. Rajesh Saha, Deepak Kumar Panda, Rupam Goswami, Brinda Bhowmick and Srimanta Baishya, “Analysis on Effect of Lateral Straggle on Analog, High Frequency and DC Parameters in Ge-source DMDG TFET” , International Journal of RF and Microwave Computer-Aided Engineering (Wiley) Volume :00 / 1-10 / 2021 DOI: 10.1002/mmce.22579

2020

  1. Rajesh Saha, “Linearity Parameters Evaluation due to Lateral Straggle in Ge-Source DMDG-TFET” , Silicon (Springer US) Volume :14 / 1-5 / 2020 DOI: 10.1007/s12633-020-00859-7
  2. K. Vanlalawmpuia, R. Saha,B. Bhowmick, “Study of effect of oxide thickness variation on electrical parameters and high frequency characteristic induced by work-function variation for delta-doped Germanium source vertical TFET” , Semiconductor Science and Technology (IOP Science) Volume :0 / — / 2020 DOI: 10.1088/1361-6641/aba823
  3. S. N. Mishra, R. Saha and K. Jena, “Normally-Off AlGaN/GaN MOSHEMT as Lebel Free Biosensor” , ECS Journal of Solid State Science and Technology (IOP Science) Volume :9 / 1-10 / 2020 DOI: 10.1149/2162-8777/aba1cd
  4. R. Saha, B. Bhowmick, and S. Baishya, “Impact of Work Function on Analog/RF and Linearity Parameters in Step-FinFET” , Indian Journal of Physics (Springer ) Volume :0 / 2387239 / 2020 DOI: 10.1007/s12648-020-01895-0
  5. R. Saha, B. Bhowmick, and S. Baishya, “Dependence of Metal Gate Work Function Variation for Various Ferroelectric Thickness on Electrical Parameters in NC-FinFET” , FERROELECTRICS (Taylor & Francis) Volume :570 / — / 2020 DOI: https://doi.org/10.1080/00150193.2020.1839256
  6. R. Saha, R. Goswami, B. Bhowmick, and S. Baishya, “Dependence of RF/Analog and Linearity Figure of Merits on Temperature in Ferroelectric FinFET: A Simulation Study” , IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control (IEEE) Volume :67 / 2433-2439 / 2020 DOI: 10.1109/TUFFC.2020.2999518
  7. R. Saha, B. Bhowmick, and S. Baishya, “Impact of lateral straggle on linearity performance in gate-modulated (GM) TFET” , Applied Physics A: Material Science and Processing (Springer) Volume :126 / 1-4 / 2020 DOI: 10.1007/s00339-017-1545-6
  8. Y. Hirpara and R. Saha, “Analysis on DC and RF/Analog Performance in Multifin-FinFET for Wide Variation in Work Function of Metal Gate” , Silicon (Springer) Volume :20 / 1-6 / 2020 DOI: https://doi.org/10.1007/s12633-020-00408-2

2019

  1. R. Saha, B. Bhowmick and S. Baishya, “Deep insights into electrical parameters due to metal gate WFV for different gate oxide thickness in Si step FinFET” , IET Micro & Nano Letters (IET) Volume :14 / 384-388 / 2019 DOI: 10.1049/mnl.2018.5220
  2. R. Saha, B. Bhowmick, and S. Baishya, “Impact of WFV on Electrical Parameters due to High-k/Metal Gate in SiGe Channel Tunnel FET” , Microelectronics Engineering (Elsevier) Volume :214 / 1-4 / 2019 DOI: https://doi.org/10.1016/j.mee.2019.04.024.
  3. R. Saha, B. Bhowmick, and S. Baishya, “Impact of Mole Fractions due to Work Function Variability (WFV) of Metal Gate on Electrical Parameters in Strained SOI-FinFET” , Silicon (Springer ) Volume :12 / 577-583 / 2019 DOI: 10.1007/s00339-020-3373-3
  4. R. Saha, B. Bhowmick, and S. Baishya, “Analytical Threshold Voltage and Subthreshold Swing model for TMG FinFET” , International Journal of Electronics (Taylor & Francis) Volume :106 / 553-566 / 2019 DOI: https://doi.org/10.1080/00207217.2018.1545258
  5. R. Saha, K Vanlalawmpuia, B.Bhowmick, and S.Baishya, “Deep Insight into DC, RF/Analog, and Digital Inverter Performance Due to Variation in Straggle Parameter for Gate Modulated TFET” , Materials Science in Semiconductor Processing (Elsevier) Volume :91 / 102-107 / 2019 DOI: https://doi.org/10.1016/j.mssp.2018.11.011
  6. R. Saha, B. Bhowmick, and S. Baishya, “Quantum Modeling of Threshold Voltage in Ge Dual Material Gate (DMG) FinFET” , Solid-State Electronics (Elsevier) Volume :159 / 129-134 / 2019 DOI: 10.1016/j.sse.2019.03.047
  7. R. Saha, B. Bhowmick, and S. Baishya, “Effect of Ge mole fraction on electrical parameters of Si1-xGex source step-FinFET and its application as an inverter” , Silicon (Springer ) Volume :11 / 209-219 / 2019 DOI: 10.1007/s12633-018-9846-8

2018

  1. R. Saha, B. Bhowmick, and S. Baishya, “Temperature effect on RF/analog and linearity parameters in DMG FinFET” , Applied Physics A (Springer) Volume :124 / 642 / 2018 DOI: 10.1007/s00339-018-2068-5
  2. K. Vanlalawmpuia, R.Saha, and B.Bhowmick, “Performance Evaluation of Heterostacked TFET for variation in lateral straggle and its application as digital inverter” , Applied Physics A (Springer) Volume :124 / 701 / 2018 DOI: 10.1007/s00339-018-2121-4
  3. R. Saha, B. Bhowmick, and S. Baishya, “GaAs SOI FinFET: impact of gate dielectric on electrical parameters and application as digital inverter” , Int. J. Nanoparticles (Inderscience Publishing ) Volume :10 / 3-14 / 2018
  4. R. Saha, B. Bhowmick and S. Baishya,, “Effect of gate dielectric on electrical parameters due to metal gate WFV in n-channel Si step FinFET” , IET Micro & Nano Letters (IET) Volume :13 / 1007-1010 / 2018 DOI: 10.1049/mnl.2018.0189
  5. R. Saha, B. Bhowmick, and S. Baishya, “A 3D Statistical Simulation Study of Titanium Metal Gate WFV on Electrical Parameters in n-channel Ge step-FinFET” , Applied Physics A (Springer) Volume :124 / 96 / 2018 DOI: 10.1007/s00339-017-1545-6
  6. R. Saha, S. Baishya, and B. Bhowmick, “3D analytical modeling of surface potential, threshold voltage, and subthreshold swing in dual-material-gate (DMG) SOI FinFETs” , Journal of Computational Electronics (Springer) Volume :17 / 153-162 / 2018 DOI: 10.1007/s10825-017-1072-x
  7. R. Saha, B. Bhowmick, and S. Baishya, “Quantum Analytical Modeling of Inversion Charge and Threshold Voltage in Nanoscale Bi-Level Uniform Gate FinFET” , ECS Journal of Solid State Science and Technology (Electrochemical Society) Volume :7 / 1-7 / 2018 DOI: 10.1149/2.0131802jss
  8. R. Saha, B. Bhowmick, and S. Baishya, “Comparative Analysis among SMG, DMG, and TMG FinFETs: RF/Analog and Digital Inverter Performance” , Journal of Nanoelectronics and Optoelectronics (American Scientific Publishers) Volume :13 / 803-811 / 2018 DOI: 10.1166/jno.2018.2336

2017

  1. R. Saha, B. Bhowmick, and S. Baishya, “Si and Ge step-FinFETs: work function variability, optimization and electrical parameters” , Superlattices and Microstructures (Elsievier ) Volume :107 / 5-16 / 2017 DOI: 10.1016/j.spmi.2017.04.001
  2. R. Saha, B. Bhowmick, and S. Baishya, “Statistical Dependence of Gate Metal Work Function on Various Electrical Parameters for an n-Channel Si Step-FinFET” , IEEE Transactions on Electron Devices (IEEE) Volume :64 / 969-976 / 2017 DOI: 10.1109/TED.2017.2657233

2016

  1. R. Saha, S. Maity, and C. T. Bhunia, “Design and characterization of a tunable patch antenna loaded with capacitive MEMS switch using CSRRs structure on the patch” , Alexandria Engineering Journal (Elsevier) Volume :55 / 2621–263 / 2016 DOI: 10.1016/j.aej.2016.05.002
  2. R. Saha, S. Maity, N. G. Devi, and C. T. Bhunia, “Analysis of Pull-in-Voltage and Figure-of-Merit of Capacitive MEMS switch” , Transaction on Electrical and Electronics Material (Springer) Volume :17 / 129-133 / 2016 DOI: https://doi.org/10.4313/TEEM.2016.17.3.129
  3. R. Saha, and S. Maity, “Ameliorate Of Bandwidth and Return Loss Of Rectangular Patch Antenna Using Metamaterial Structure For RFID Technology” , Journal of Engineering Science & Technology (International Journal) Volume :11 / 1249-1262 / 2016

2015

  1. R. Saha, C. T. Bhunia, and S. Maity, “Design of Micromachining Based Patch Antenna to Enhance Performances for RFID Tag Application” , IJFGCN (International Journal) Volume :8 / 261-268 / 2015
  2. N. G. Devi, S. Maity, R. Saha, and S. K. Metya, “RF-MEMS and CSRRs Based Tunable Filter Designed for Ku and K Bands Application” , COGENT ENGINEERING (Taylor and Francis) Volume :2 / 1-11 / 2015 DOI: https://doi.org/10.1080/23311916.2015.1083641

International Conferences:

2023

  1. J. Kumar, R. Chaudhary and R. Saha, “Performance Analysis of Dielectric Modulated Dual Material Double Gate Hetero Stack DM-DMDG-HS TFET” , International Conference on Intelligent and Innovative Technologies in Computing, Electrical and Electronics by :IEEE at Bangaluro / 296-301 / 2023
  2. H. K. Phulawariya, R. Chaudhary, S. Tiwari and R. Saha, “Realization of Logic Performance Using Double Gate TFET DG-TFET and Ge Source DG-TFET S-Ge-TFET” , AISP 2023 by :IEEE at VIT AP University / 1-5 / 2023
  3. Ravindra Kumar Maurya, Vivek Kumar, Rajesh Saha, Brinda Bhowmick, “Effects of FerroThickness and Temperature on Electrical Performance of SiHfO2 Based NC FinFET” , 2023 11th International Symposium on Electronic Systems Devices and Computing by :IEEE at Sri City India / / 2023

2022

  1. Rajesh Saha, Brinda Bhowmick, and Srimata Baishya, “RF/Analog Parameters in DMG-FinFET for Channel Material Beyond Si” , AISP 2022 by :IEEE at VIT AP University / / 2022

2021

  1. Rajesh Saha, Deepak Panda, Rupam Goswami, Brinda Bhowmick and Srimanta Baishya , “Effect of Drain Engineering on DC and RF Characteristics in Ge-Source SD-ZHP-TFET ” , DevIC 2021 by :IEEE at Kalyani, Kolkata / / 2021
  2. Deepjyoti Deb, Rupam Goswami, Ratul Baruah, Kavindra Kandpal, Rajesh Saha, “An SOI N-P-N Double Gate TFET for Low Power Applications ” , DevIC 2021 by :IEEE at Kalyani, Kolkata / / 2021

2020

  1. GPVY Nikhil, Chinmay Dimri, PK Mohanty, R Saha, and S Routray, “High-κ Dielectrics on 20nm FDSOI FinFET: Study on Analog and RF Performance” , 2020 IEEE Calcutta Conference (CALCON) by :IEEE at Kolkata / 102-105 / 2020
  2. Rajesh Saha, Rupam Goswami, Brinda Bhowmick and Srimanta Baishya, “Electrical Performance of Gate Modulated TFET (GM-TFET) With Epitaxial Layer” , 7th International Conference on Microelectronics, Circuits and Systems 2020 (Micro 2020) by :Conference Proceeding at Delhi Technological University, Delhi / / 2020

2017

  1. R. Saha, B. Bhowmick and S. Baishya, “Effects of Temperature on Electrical Parameters in GaAs SOI FinFET and Application as Digital Inverter” , 2017 Devices for Integrated Circuit (DevIC) by :IEEE at Kalyani, India / 462-466 / 2017

2015

  1. R. Saha, S. Maity, and N. Trigunayat, “Enhancementof Gain, Bandwidth and Directivity of a Patch Antenna by Increasing Dielectric Layers of the Substrate Through Micromachining Technique for RFID Application” , 2015 International Conference on Advances in Computer Engineering and Applications by :IEEE at Ghaziabad, India / / 2015

2014

  1. R. Saha, S. Bhattacharjee, C. T. Bhunia, and S. Maity, “Dual Band Operation Using Metamaterial Structure for Radio Frequency Identiication (RFID) System” , 2014 International Conference on Signal Propagation and Computer Technology (ICSPCT) by :IEEE at Govt. Engg. College of Ajmer, Rajasthan / 16-19 / 2014
  2. S. Bhattacharjee, R. Saha, and S. Maity, “Metamaterial Based Patch Antenna With Omega Shaped Slot for RFID System” , 2014 International Conference on Advances in Engineering & Technology Research by :IEEE at Unnao, India / / 2014

Book Chapters:

  1. “A novel MEMS based frequency tunable rectangular patch antenna” ISBN:978-81-322-2638-3 published by – Springer Year: 2016 authors- R. Saha, S. Maity, and L. Sarkar
  2. “RF/Analog and Linearity Performance Evaluation of a Step-FinFET under Variation in Temperature” ISBN:9781003097723 published by – CRC Press Year: 2020 authors- Rajesh Saha, Brinda Bhowmick and Srimanta Baishya
  3. “Effect of Au-Al Dual-Metal Gate on 3D Double-Gate Junctionless Transistor Performance” ISBN:978-981-16-2108-6 published by – Springer Year: 2021 authors- Achinta Baidya, Rajesh Saha, Amarnath Gaini, Chaitali Koley, Somen Debnath, and Subir Datta
  4. “Effect of Dielectric Material on Electrical Parameters Present near Source Region in Hetero Gate Dielectric TFET” ISBN:9781003126645 published by – CRC Press Year: 2021 authors- Rajesh Saha, Suman Kumar Mitra, Deepak Kumar Panda
  5. “Effect of Channel Doping Variation on Electrostatic Characteristics of 3D Double Gate Junctionless Transistor” ISBN:978-981-16-2108-6 published by – Springer, Singapore Year: 2021 authors- Achinta Baidya, Rajesh Saha, Amarnath Gaini, Chaitali Koley, Somen Debnath, and Subir Datta

Book Edited:

  1. “Contemporary Trends in Semiconductor Devices: Theory, Experiment and Applications” ISBN:1876-1100 published by – Springer, 2022, Edited By- Rupam Goswami and Rajesh Saha.

Reference Book:

  1. B. Bhowmick, R. Goswami, and R. Saha, ” Simulation and Modelling of Emerging Devices: Tunnel FET and FINFET,” Cambridge Scholars Publishing, 2023, Lady Stephenson Library, Newcastle upon Tyne, United Kingdom, ISBN: 1-5275-0702-5 ISBN13: 978-1-5275-0702-9

Award and Recognitions:

  1. Enlisted in top 2% Scientist in the world list for given by Stanford University and Elsevier Year – 2023
  2. Received IEI Young Engineers Award 2022-23, given by The Institution of Engineers (India) Year – 2022
  3. Best Paper Award for for Paper Presentation given by 4th Int. Conference DevIC 2021 Year – 2021
  4. Best Session Paper Award for Paper presented at Micro 2020 given by 7th International Conference on Microelectronics, Circuits and Systems 2020 (Micro 2020), Year – 2020
  5. Received B. E. with honors from Assam Engineering College
  6. Secured 10th rank in “Mathematical Talent Search Examination” held on 2004
  7. Recipient of Anundoram Borooah award in 2005

Admin Responsibilities:

  1. GeM Nodal Officer (ECE Department) from 16 February, 2024 to till date
  2. Member, Departmental Purchase Committee (DPC), Department of ECE from April, 2024 to till date
  3. External Member, Departmental PhD Monitoring Committee (DPMC), Department of Physics from March, 2024 to till date
  4. Faculty Advisor, Quiz Club in MNIT Jaipur from 10/10/2022 to 20/11/2023
  5. Member of DUGC in MNIT Jaipur from 01/10/2021 to 2/10/2023
  6. Departmental Time Table Coordinator in MNIT Jaipur from 10/08/2021 to 10/12/2022
  7. Faculty-in-Charge, IC/MEMS Lab in MNIT Jaipur from 04/02/2021 to 20/11/2023
  8. Faculty Coordinator of IEEE Student Branch in VIT AP University from 19/09/2018 to 26/02/2020

Professional Membership:

  1. Senior Member of IEEE
  2. Member of IEEE EDS

Ph.D. Guiding:

  1. Shreyas Tiwari
  2. Rashi Chaudhary
  3. Ravindra Kr Maurya
  4. Manosh Protim Gogoi

M. Tech. Thesis Guided:

  1. S L Nivas Teja on Study on Non-ideal Effects on Electrical Parameters in Nano-Ribbon FET , Year 2022-2023 (Presently at Synopsys)
  2. Khan Abdulkarim Abdulquyyaum on Step Shape Double Gate TFET as Biosensor and Optosensor Applications, Year 2022-2023 (Presently at Infineon Technology)
  3. Lobzang Chonzom on Extended Source and L shape TFETs for Optical Application, Year 2022-2023 (Presently at Intel)
  4. Mrigendra Singh on Physical Design implementation of block design using OCC for Clock Control, Year – 2021-2022. (Presently at Marvell Semiconductors)
  5. Gara Srinivasar on Electrical Parameter Analysis of PIN and NPN Double Gate TFETs, Year – 2021-2022. (Presently at Chipsprit Technology)
  6. JITENDRA KUMAR on Analysis on RF/Analog parameters of Hetero-stacked TFET and its application as Biosensor, Year – 2021-2022. (Presently as Ex-Marvell Semiconductors)
  7. Krishna Pal on Optimization of Electrical Parameters for CNT FET, Year – 2020-2021 (Presently at IIT Tirupati)

B. Tech. Projects Guided:

  1. Yakshraj Sharma, Lakshya Vijay, Archita Kumari, Muskan: Comparison Study of RF/Analog and Linearity Performance of Dual Material Gate Graphene Source Vertical TFET (DMG-GR-VTFET) and Single Material Gate GR-VTFET, Year 2022-2023.
  2. Tarun Kumar Bhardwaj, Vaibhav Jain, Sagar Bharti, Shubhankar Shyamal : DESIGN AND ANALYSIS OF DOUBLE GATE TFET (DG-TFET) BASED BIOSENSOR, Year – 2021-2022.
  3. Ayush Mangla, Mohit Soni, Vedashree Bhide, Akhila Oruganti : THIRD EYE FOR THE BLIND, Year – 2020-2021

Events Organized:

  1.  FDP on MATLAB Programming at MNIT Jaipur, Jaipur, India from 22-08-2022 to 02-09-2022
  2. FDP on Research methodology and authoring/reviewing Manuscripts at MNIT Jaipur, Jaipur, India from 25-07-2022 to 05-08-2022
  3. FDP on Scientific Computation and GUI Development Using MATLAB at MNIT Jaipur, Jaipur, India from 21-03-2022 to 31-03-2022
  4. Workshop on Emerging CMOS Technologies and Beyond: Trends and Challenges at MNIT Jaipur, Jaipur, India from 26-11-2020 to 30-11-2020
  5. Conference on AISP 2020 at VIT AP University, Amaravati, AP, India from 10-01-2020 to 12-01-2020
  6. Seminar on Benefits and Opportunities of IEEE at VIT AP University, Amaravati, AP, India from 31-08-2019 to 31-08-2020