Dr. Trupti Ranjan Lenka

February 28, 2022 by Trupti Lenka
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TRLenka

Associate Professor

National Institute of Technology Silchar

Department of Electronics and Communications Engineering

Silchar, Assam, 788010, India

Email: trlenka@ece.nits.ac.in 

Phone: +91-XXXXXXXXXX

Date of Joining: 07/12/2012

Academic Experience: 21 years

Personal Webpage: http://ec.nits.ac.in/trlenka/

ACADEMIC QUALIFICATIONS:

  • Ph.D. (Microelectronics Engineering): Sambalpur University, Sambalpur, Odisha, India, 2012.
  • M.Tech. (VLSI Design): Dr. A. P. J. Abdul Kalam Technical University, Lucknow, UP, India, 2007.
  • B.Tech. (ECE): Berhampur University, Berhampur, Odisha, India, 2000.

EXPERIENCES: ~21 Yrs

  • Associate Professor: Department of Electronics & Communication Engineering, National Institute of Technology Silchar, Assam since 06th July 2022 to date.
  • Assistant Professor: Department of Electronics & Communication Engineering, National Institute of Technology Silchar, Assam from 07th Dec 2012 – 05th July 2022.
  • Visiting Researcher: Helen and John C. Hartmann Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, USA, June-Aug 2019.
  • Visiting Researcher: Solar Energy Research Institute of Singapore (SERIS), National University of Singapore (NUS), June-Sept 2018.
  • Associate Professor: Department of Electronics & Communication Engineering, National Institute of Science & Technology, Berhampur, Odisha, Aug 2007 – Dec 2012.
  • Reader: Department of Electronics & Communication Engineering, GLA University, Mathura, UP, Sept 2001 – Aug 2007.

RESEARCH INTERESTS AND SPECIALIZATION:

  • Nanoelectronics and Nanotechnology
  • VLSI Design and Technology
  • Solar Photovoltaics
  • MEMS-based Energy Harvesting

BIOGRAPHICAL SKETCH:

Dr. T. R. Lenka works as an Associate Professor in the Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam. He has 21 years of experience in academics and electron devices research. He received a Ph.D. degree in Microelectronics Engineering from Sambalpur University, Odisha, India in 2012, an M.Tech degree in VLSI Design from Dr. A. P. J. Abdul Kalam Technical University, Lucknow, India in 2007, and a B.E. degree in Electronics and Communication Engineering from Berhampur University, India in 2000. He was a Visiting Researcher at Helen and John C. Hartmann Department of Electrical and Computer Engineering, New Jersey Institute of Technology (NJIT), Newark, New Jersey, USA in 2019, and also a Visiting Researcher at Solar Energy Research Institute of Singapore (SERIS), National University of Singapore (NUS), Singapore in 2018. He received the Outstanding Volunteer Award 2021 by IEEE Kolkata Section, IEEE Electron Devices Society (EDS) Student Branch Chapter of the Year Award 2021, Distinguished Researcher in Nanoelectronics Award 2021 by Venus International Science and Technology Awards, Distinguished Faculty Award 2019 by NIT Silchar and Visvesvaraya Young Faculty Research Fellowship (YFRF) Award 2018 by the Ministry of Electronics and Information Technology (MeitY), Govt. of India. He is a Certified Professional Engineer (I), Chartered Engineer (I), Fellow of IETE and IEI; Senior Member of IEEE, Member of IET, OSA, SPIE, IOP (MInstP), SSI; Life Member of ISTE, OBA, and OPS. He is actively associated with IEEE-EDS, SSCS, CAS, Photonics society, and NTC. He is the founding Chair of IEEE Kolkata Section Nanotechnology Council Chapter (NTC) since 2020 and the founding Chapter Advisor of IEEE ED NIT Silchar Student Branch Chapter since 2013. His research interests include Nanoelectronics: III-Nitride and Ga2O3 based heterojunction devices for RF/Microwave and power electronics and Nanowire LED, Solar Photovoltaics, MEMS-based piezoelectric energy harvesting, and Nanotechnology. He has guided 12 Ph.D. scholars and 23 M.Tech scholars under his supervision. He has published more than 180 research articles in SCI/Scopus indexed scientific journals, book chapters, and conference proceedings. He has edited four books by Springer Nature. He is the Princiapal (Co) Investgator of several sponsored research projects funded by DST-SERB (MATRICS, Indo-Italy Bilateral, ASEAN-India Collaborative R&D project ), CSIR and MHRD.

PROJECTS:

  1. Co-PI: DST (International Division) sponsored Indo-Italian Executive Programme of Scientific and Technological Cooperation on “Modelling, Fabrication, and Testing of MEMS-based Hybrid Vibrational Energy Harvester having Segmented Electrodes and Storage” (2022 – 2024) (3 Years).
  2. PI: DST-SERB Sponsored MATRICS Research Project titled “Characteristics Study of Heterojunction Nanoelectronics Devices using Quantum Transport Models through an Indigenous Program,” File No. MTR/2021/000370, 14th Jan 2022. ( 6.6 Lakhs; 3 Years)
  3. PI: 2021-2022 IEEE Electron Devices Society (EDS) Summer School (7500 USD)
  4. PI: CSIR-EMR-II Sponsored Research Project entitled “Development of Low-Cost, High-Stability and High-Efficiency Perovskite Solar Cell for Energy Harvesting: A Theoretical and Experimental Study” Sanction Letter 22 (0830)/19/EMR-II; Date: 02/12/2019 (Rs. 21.50 Lakhs; 3 Years)
  5. PI: DST-SERB sponsored ASEAN-India Collaborative Research Project entitled “Development of Low-Cost, High-Efficiency and High-Stability Perovskite/Silicon Tandem Solar Cell for Energy Harvesting” under ASEAN-India S&T Development Fund (AISTDF) ( 31,94,000/-) (2.5 Years) (18 Sept 2019-31 Mar 2022)
  6. PI: DST-SERB partial grant-in-aid to conduct “National Workshop on Modeling of Novel Nanoelectronics Devices and Circuits for ULSI Technology” during 26-30 April 2019. (1 Lakh) (Completed)
  7. PI: Visvesvaraya Young Faculty Research Fellowship Award by Ministry of Electronics and Information Technology (MeitY), GOI, 2018. (16.6 Lakhs; 17 Jan 2018-30 Sept 2020) (Completed)
  8. PI: MHRD Sponsored GIAN Course: “Nanoelectronics Challenges for Internet of Things” by Prof. Durgamadhab Misra, NJIT, USA from 05-09 Jan 2017. (5.44 Lakhs) (Completed)
  9. PI: MHRD Sponsored GIAN Course: “Mapping Algorithm to VLSI Architectures” by Prof. P. K. Meher, NTU, Singapore from 01-05 Aug 2016. (5.44 Lakhs) (Completed)
  10. Co-PI: Project entitled “Capability building through Internship Scheme for UG/PG/PhD Research students of recognized Universities/Institutes in North-Eastern India for strengthening Research and Development using HPC Technologies” Project approved by C-DAC North East Steering Committee. (10 Lakhs) (2015-2017) (Completed)
  11. Co-PI: Project entitled “Design, Delivery, and Conduction of Virtual Teaching Program for B.Tech Programs of NIT Manipur”. (Project approved by C-DAC North East Steering Committee and Coordinated by C-DAC, Noida) (2.71 Lacs) (2014-2016) (Completed)
  12. Co-PI: DST-SERC (Science and Engineering Research Council) sponsored Project entitled “HEMT Design and Modeling for High-Frequency Communication Circuit” DST No: SR/S3/EECE/0042/2010-2013. (27.34 Lakhs) (Completed)

PATENTS:

  1. Rabin Paul, Samadrita Das, Gadadasu Purnachandra Rao, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, Susanta Kumar Tripathy, “An n-doped a-Si/CZTSe ultra-thin-film solar cell device for energy harvesting,” German Innovation Patent, May 2022. (Filed)
  2. Ashutosh Srivastava, Susanta Kumar Tripathy, Trupti Ranjan Lenka, “A Method For Developing Thin Film Solar Cell With Alternative Absorber Layer,” Australian Innovation Patent, No. 2021106184, 20th Aug 2021 (Filed), 10th Nov 2021. (Granted)

 

PUBLICATIONS:

INTERNATIONAL JOURNALS:

2022

  1. S. R. Routray, T. R. Lenka, S. Menon, “Determinants Affecting the Performance of CZTSSe: Antisite Defects and Multiple Quantum Confinement for Photon-Sensitive Devices,” IEEE Sensors Journal, 27th June 2022. (Accepted) [IF: 3.301 (2021), Q1, SCI]
  2. Nour El I Boukortt, Salvatore Patanè , Antonio Jesus Garcia-Loureiro , Amal M Alamri, Yaser M Abdularheem, Trupti Ranjan Lenka, Rabin Paul, Ahmad Abushattal, “Electrical and Optical Investigation of 2T–Perovskite/u-CIGS Tandem Solar Cells with ~ 30% Efficiency,” IEEE Transactions on Electron Devices, May 17, 2022. DOI: 10.1109/TED.2022.3176591. [IF: 2.917 (2020), Q1, SCI]
  3. A. Srivastava, S. K. Tripathy, T. R. Lenka, Vishal Goyal, “Numerical simulations of novel quaternary chalcogenide Ag2MgSn(S/Se)4 based thin-film solar cells using SCAPS 1-D,” Solar Energy, Volume 239, 2022, Pages 337-349, ISSN 0038-092X, https://doi.org/10.1016/j.solener.2022.05.014. [IF: 5.742 (2021), Q1, SCI]
  4. R. Singh, T. R. Lenka, D. K. Panda, H. P. T. Nguyen, N. El. I. Boukortt, and G. Crupi, “Analytical Modeling of IV characteristics using 2D Poisson Equations in AlN/Beta-Ga2O3 HEMT,” Materials Science in Semiconductor Processing (Elsevier), Volume 145, July 2022, 106627, ISSN 1369-8001, https://doi.org/10.1016/j.mssp.2022.106627. [IF: 3.927 (2021), Q1, SCI]
  5. S. Das, T. R. Lenka, F. A. Talukdar, H. P. T. Nguyen, “Effects of Polarized-Induced Doping and Graded Composition in an Advanced Multiple Quantum Well InGaN/GaN UV-LED for Enhanced Light Technology,” Engineering Research Express (IOP Science), 26th Jan 2022. DOI: 10.1088/2631-8695/ac4fb1. [Scopus, WoS-ESCI]
  6. R. Paul, S. Vallisree, T. R. Lenka, F. A. Talukdar, “Modeling and Simulation of CZTS Thin-Film Solar Cell for Efficiency Enhancement,” Journal of Electronic Materials (Springer), 14th Jan 2022. https://doi.org/10.1007/s11664-022-09449-2. ISSN: 0361-5235. [IF: 1.938 (2020), Q2, SCI]
  7. Nour El I. Boukortt, T. R. Lenka, Salvatore Patanè, Giovanni Crupi, “Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure,” Electronics (MDPI) 2022, 11(1), 91; DOI: 10.3390/electronics11010091. ISSN: 2079-9292. [IF: 0.38, Q2, SCI]
  8. R. T. Velpula, B. Jain, R. Wang, T. R. Lenka, H. P. T. Nguyen, “Polarization-Engineered P-type Electron-Blocking Layer Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for the Enhanced Carrier Transport,” Journal of Electronic Materials (Springer), 2022. DOI: 10.1007/s11664-021-09363-z. [IF: 1.938 (2020), Q2, SCI]
  9. J. T. Mazumder, T. R. Lenka, S. K. Tripathy, Per Erik Vullum, P. S. Menon, F. Lin, A. G. Aberle, “Investigation of structural, morphological, and optoelectronic properties of Ga-doped TiO2 nanoparticles for electron transport layer in solar cell applications: An experimental and theoretical study,” Journal of Physics and Chemistry of Solids (Elsevier), Vol. 161, 2022, 110410. ISSN: 0022-3697, DOI: 10.1016/j.jpcs.2021.110410. [IF: 3.995 (2021), Q2, SCI]

2021

  1. J. Husna, P. S. Menon, P. Chelvanathan, M. A. Mohamed, S. K. Tripathy, T. R. Lenka, “Numerical study of semi-transparent thin-film heterojunction p-CuO/n-ZnO/AZO/ITO solar cells device model using SCAPS-1D,” Chalcogenide Letters, Vol. 18, Issue 11, p667-679. 13p, Nov 2021.
  2. A. Srivastava, S. K. Tripathy, T. R. Lenka, P. S. Menon, F. Lin, A. G. Aberle, “Device Simulation of Ag2SrSnS4 and Ag2SrSnSe4 Based Thin-Film Solar Cells from Scratch,” Advanced Theory and Simulations (Wiley), Nov 2021. DOI: 10.1002/adts.202100208, ISSN: 2513-0390. [Q1, SCI]
  3. S. Vallisree, T. R. Lenka, V. Goyal and H. P. T. Nguyen, “Carrier Transport Mechanism in Bottom Gate Thin-Film Transistor (TFT) with SnO as Active layer for CMOS Displays,” International Journal of Numerical Modelling: Electronic Devices and Fields (Wiley), Nov 2021. DOI: 10.1002/jnm.2975, ISSN: 1099-1204. [IF: 1.26 (2020), Q3, SCI]
  4. R. Singh, T. R. Lenka, D. K. Panda, and H. P. T. Nguyen, “Investigation of β-Ga2O3-based HEMT for Low Noise Amplification and RF Application,” Engineering Research Express (IOP Science), 3(3), p.035042, 2021. DOI: 10.1088/2631-8695/ac23b3, ISSN: 2631-8695. [Scopus, WoS-ESCI]
  5. T. R. Lenka, R. Singh, S. K. Tripathy, V. Goyal, T. K. Nguyen and H. P. T. Nguyen, “2DEG Characteristics of InAlAs/InP based HEMTs by Solving Schrödinger and Poisson Equations followed by Device Characteristics,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), July 24, 2021. DOI:10.1002/jnm.2941, ISSN: 1099-1204. [IF: 1.26 (2020), Q3, SCI]
  6. A. Srivastava, S. K. Tripathy, T. R Lenka, P. S Menon, F. Lin, A. G Aberle, “An Ab-initio Investigation of Mechanical and Thermodynamic Properties of Ag2MgSn(S/Se)4 in Kesterite and Stannite Phases,” Applied Physics A-Materials Science & Processing (Springer), Vol. 127, No. 8, pp. 1-12, 2021. DOI: 10.1007/s00339-021-04741-0. [IF: 2.584, Q2, SCI]
  7. R. T. Velpula, B. Jain, T. R. Lenka, H. P. T. Nguyen, “Controlled Electron Leakage in Electron Blocking Layer Free InGaN/GaN Nanowire Light-Emitting Diodes,” FACTA UNIVERSITATIS, Series: Electronics and Energetics (FUEE), Vol. 34, No. 3, July 2021. DOI: 10.2298/FUEE2103393V, ISSN: 2217-5997. [WoS-ESCI]
  8. R. Singh, T. R. Lenka, H. P. T. Nguyen, “Analytical Study of Effect of Energy Band Parameters and Lattice Temperature on Conduction Band Offset in AlN/Ga2O3 HEMT,” Facta Universitatis, Series: Electronics and Energetics (FUEE), Vol. 34, No. 3, July 2021. DOI: 10.2298/FUEE2103323S. [WoS-ESCI]
  9. R. Singh, T. R. Lenka, D. K. Panda, and H. P. T. Nguyen, “Investigation of β-Ga2O3-based HEMT for Low Noise Amplification and RF Application,” TechRxiv, 13-May-2021, doi: 10.36227/techrxiv.14566407.v1.
  10. J. T. Mazumder, T. R. Lenka, Milan Zunic, Zorica Brankovic, S. K. Tripathy, P. S. Menon, F. Lin, A. G. Aberle, “First principle study on structural and optoelectronic properties and bandgap modulation in germanium incorporated tin (IV) oxide,” Materials Today Communications (Elsevier), 102393, Apr 2021. ISSN: 2352-4928. [IF: 2.678, Q2, SCI]
  11. S. Vallisree, R Thangavel, T. R. Lenka, “An Efficient Modeling Strategy for Performance Optimization in 2-Terminal CZTS-Silicon Tandem Solar Cells,” International Journal of Energy Research (Wiley), Feb 2021. DOI: 10.1002/er.6540. ISSN: 0363907X. [IF: 5.164, Q1, SCI] 

2020

  1. J. Husna, P. S. Menon, P. Chelvanathan, J. Sampe, N. Amin, S. K. Tripathy, T. R. Lenka, A. R. Md. Zain, and M. A. Mohamed, “Bandgap Shifting and Crystalline Quality of RF-Sputtered IntrinsicZnO Nanofilm for TFSC Application,” International Journal of Nanoelectronics and Materials, Vol. 13 (Special Issue), pp.1-10, Dec 2020. ISSN: 1985-5761. [IF: 1.61, Q3, SCI]
  2. A. Srivastava P. Dua, T. R. Lenka, S. K. Tripathy, “Numerical simulations on CZTS/CZTSe based solar cell with ZnSe as an alternative buffer layer using SCAPS- 1D,” Materials Today: Proceedings, Nov 2020. DOI: 10.1016/j.matpr.2020.10.986. [Scopus]
  3. A. Baidya, T. R. Lenka, S. Baishya, “Linear Distortion Analysis of 3D Double Gate Junctionless Transistor with High-k Dielectrics and Gate Metals,” Silicon, Aug 2020. DOI: 10.1007/s12633-020-00669-x. [IF: 1.499, Q3, SCIE]
  4. A. Srivastava, P. Sarkar, S. K. Tripathy, T. R Lenka, P. S Menon, F. Lin, A. G Aberle, “Structural, electronic and optical properties of Ag2MgSn(S/Se)4 quaternary chalcogenides as solar cell absorber layer: An Ab-initio study,” Solar Energy (Elsevier), Vol. 209, Oct 2020, Pages 206-213. DOI: 10.1016/j.solener.2020.08.094. [IF: 4.674, Q1, SCI]
  5. H. Q. T. Bui, R. Velpula, B. Jain, M. Philip, H. Tong, T. R. Lenka, and H.P.T. Nguyen, “High-performance nanowire ultraviolet light-emitting diodes with potassium hydroxide and ammonium sulfide surface passivation,” Appl. Opt. (OSA), Vol. 59, Issue 24, pp. 7352-7356 (2020), DOI: 10.1364/AO.400877. ISSN: 1559-128X. [IF: 1.961, Q1, SCI]
  6. D. K. Panda, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, T. T. Pham, H. P. T. Nguyen, “Single and Double Gate based AlGaN/GaN MOS-HEMTs for Design of Low Noise Amplifiers: A Comparative Study,” IET Circuits, Devices & Systems, 2020, 14, (7), p. 1018-1025, DOI: 10.1049/iet-cds.2020.0015. ISSN: 1751-858X. [IF: 1.395, Q3, SCI]
  7. P. Sarkar, A. Srivastava, S. K. Tripathy, K. L. Baishnab, T. R. Lenka, P. S. Menon, F. Lin, A. G. Aberle, “Exploring the Effect of Ga3+ Doping on Structural, Electronic and Optical Properties of CH3NH3PbCl3 Perovskites: An Experimental Study,” Journal of Materials Science: Materials in Electronics (Springer), July 2020 DOI:10.1007/s10854-020-04019-w. ISSN: 0957-4522. [IF: 2.195, Q2, SCI]
  8. R. Singh, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen, “A novel β-Ga2O3 HEMT with fT of 166 GHz and X-band POUT of 2.91 W/mm,” International Journal of Numerical Modelling: Electronic Networks Devices and Fields (Wiley), Vol.34, Issue 1, 2020, DOI:10.1002/jnm.2794. ISSN: 1099-1204. [IF: 1.26 (2020), Q3, SCI]
  9. R. Singh, T. R. Lenka, H. P. T. Nguyen, “Optimization of Dynamic Source Resistance in Novel β-Ga2O3 HEMT and its Effect on Electrical Characteristics,” Journal of Electronic Materials (Springer), Vol. 49, No. 9, pp. 5266-5271, June 09, 2020; DOI: 10.1007/s11664-020-08261-0. ISSN: 0361-5235. [[IF: 1.938, Q2, SCI]
  10. R. Singh, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen, “Investigation of Current Collapse and Recovery Time due to Deep Level Defect Traps in β-Ga2O3 HEMT,” Journal of Semiconductors (IOP Science), Vol. 41, No. 10, pp. 1-4, May 23, 2020. DOI: 10.1088/1674-4926/41/10/102802. ISSN: 1674-4926. [Q2, Scopus, WoS-ESCI]
  11. T. R. Lenka, “GaN and Ga2O3-based Wide Bandgap Semiconductor Devices for Emerging Nanoelectronics,” CSI Transactions on ICT (Springer), 8(2):105–110, May 28, 2020. DOI: 10.1007/s40012-020-00290-8. ISSN: 2277-9086.
  12. T. R. Lenka, A. C. Soibam, K. Dey, T. Maung, F. Lin, “Numerical Analysis of High-Efficiency Lead-Free Perovskite Solar Cell with NiO as Hole Transport Material and PCBM as Electron Transport Material,” CSI Transactions on ICT (Springer), 8(2):111–116, May 21, 2020. DOI: 10.1007/s40012-020-00291-7. ISSN: 2277-9086.
  13. R. Singh, T. R. Lenka, D. K. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen, “The Dawn of Ga2O3 HEMTs for High Power Electronics – A Review,” Materials Science in Semiconductor Processing (Elsevier), Volume 119, 15 Nov 2020, 105216. DOI: 10.1016/j.mssp.2020.105216. ISSN: 1369-8001. [IF: 2.722, Q1, SCI]
  14. R. T. Velpula, B. Jain, H. Q. T. Bui, F. M. Shakiba, J. Jude, M. Tumuna, H. D. Nguyen, T. R. Lenka, and H. P. T. Nguyen, “Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure,” Appl. Opt. (OSA) Vol. 59, No. 17, pp. 5276-5281, 10 June 2020. DOI: 10.1364/AO.394149. ISSN: 1559-128X. [IF 1.961, Q1, SCI]
  15. P. Sarkar, A. Srivastava, S. K. Tripathy, K. L. Baishnab, T. R. Lenka, P. S. Menon, F. Lin, A. G. Aberle, “Impact of Sn doping on methylammonium lead chloride perovskite: An experimental study,” Journal of Applied Physics (AIP), 127,125110 (2020); DOI: 10.1063/1.5133457. ISSN: 0021-8979. [IF: 2.328, Q2, SCI]
  16. S. Vallisree, A, Sharma, R Thangavel, T. R. Lenka, “Investigations of carrier transport mechanism and junction formation in Si/CZTS dual absorber solar cell technology,” Applied Physics A-Materials Science & Processing (Springer), 126, 163, pp.1-10 (2020). DOI: 10.1007/s00339-020-3343-9. ISSN: 0947-8396. [IF: 2.584, Q2, SCI]
  17. R. T. Velpula, B. Jain, H. Q. T. Bui, T. T. Pham, V. T. Le, H. D. Nguyen, T. R. Lenka, H. P. T. Nguyen, “Numerical investigation on the device performance of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes,” Optical Materials Express (OSA), Vol. 10, Issue 2, pp. 472-483 (2020), DOI: 10.1364/OME.380409. ISSN: 2159-3930. [IF: 2.673, Q1, SCI]
  18. B. Jain, R.T. Velpula, T. H. Q. Bui, K. T. Nguyen, T. R. Lenka, H. P. T. Nguyen, “High-Performance Electron Blocking Layer Free InGaN/GaN Nanowire White-Light-Emitting Diodes,” Optics Express (OSA), Vol. 28, Issue 1, pp. 665-675 (2020), DOI:10.1364/OE.28.000665. ISSN: 1094-4087. [IF: 3.561, Q1, SCI]

2019

  1. H. Q. T. Bui, R. T. Velpula, B. Jain, O. H. Aref, H. D. Nguyen, T. R. Lenka, H. P. T. Nguyen, “Full-color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays,” Micromachines (MDPI), 10 (8), 492; DOI:10.3390/mi10080492. ISSN: 2072-666X. [IF: 2.48, Q2, SCIE]
  2. S. R. Routray, T. R. Lenka, “Effect of Degree of Strain Relaxation on Polarization Charges of GaN/InGaN/GaN Hexagonal and Triangular Nanowire Solar Cells,” Solid-State Electronics (Elsevier), Vol. 159, pp. 142-149, Sept 2019. DOI: 10.1016/j.sse.2019.03.049. ISSN: 0038-1101. [IF: 1.66, Q2, SCI]
  3. A. Baidya, T. R. Lenka, S. Baishya, “3D Double Gate Junctionless Nanowire Transistor Based Pass Transistor Logic Circuits for Digital Applications,” IETE Journal of Research, Aug 2019; DOI: 10.1080/03772063.2019.1649203. ISSN: 0377-2063. (Taylor & Francis) [IF: 0.793, Q3, SCI]
  4. D. K. Panda, T. R. Lenka, “Linearity Improvement in E-mode Ferroelectric GaN MOS-HEMT using Dual Gate Technology,” IET Micro & Nano Letters, Vol.14, Issue 6, pp. 618 – 622, May 2019. DOI: 10.1049/mnl.2018.5499. ISSN: 1750-0443. [IF: 0.975, Q3, SCIE]
  5. D. Panda, T. R. Lenka, “Analytical Model Development of Channel Potential, Electric Field, Threshold Voltage and Drain Current for Gate Work function Engineered Short Channel E-mode N-Polar GaN MOS-HEMT,” Microsystem Technologies (Springer), 24 Jan 2019. DOI: 10.1007/s00542-019-04324-3. ISSN: 0946-7076. [IF: 1.513, Q2, SCI]

 2018

  1. S. Vallisree, R. Thangavel, T. R. Lenka, “Modelling, simulation, optimization of Si/ZnO and Si/ZnMgO heterojunction solar cells,” Materials Research Express (IOP Science), Vol. 6, No.2, pp. 025910, 13 Nov 2018. DOI: 10.1088/2053-1591/aaf023. ISSN: 2053-1591. [IF: 1.151, Q2, SCI]
  2. M. Krishnasamy, D. Upadrashta, Y. Yang, T. R. Lenka, “Distributed Parameter Modeling of Cutout 2-DOF Cantilevered Piezo-Magneto-Elastic Energy Harvester,” IEEE Journal of Microelectromechanical Systems, Vol. 27, Issue. 6, pp. 1160 – 1170, Oct 2018, DOI: 10.1109/JMEMS.2018.2875788. ISSN: 1057-7157. [Q2, SCI]
  3. S. Routray and T. R. Lenka, “Polarization Charges in a High-Performance GaN/InGaN Core/Shell Multiple Quantum Well Nanowire for Solar Energy Harvesting,” IEEE Transactions on Nanotechnology, Vol. 17, No. 6, pp. 1118-1124, Nov. 2018, doi: 10.1109/TNANO.2018.2848287. ISSN: 1536-125X. [IF: 2.857, Q2, SCI]
  4. G. Amarnath, D. Panda, T. R. Lenka, “Modelling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), Vol. 32, No. 1, pp. 1-11, Apr 2018, DOI:10.1002/jnm.2456. ISSN: 1099-1204. [IF: 1.26 (2020), Q3, SCI]
  5. D. Panda, T. R. Lenka, “A Compact Thermal Noise Model for Enhancement mode N-polar MOS-HEMT including 2DEG Density Solution with Two Sub-bands,” IET Circuits, Devices & Systems, Vol. 12, Issue. 6, pp.810–816, Mar 2018. DOI: 10.1049/iet-cds.2017.0226. ISSN: 1751-858X [IF: 1.395, Q3, SCI]
  6. D. Panda, G. Amarnath, T. R. Lenka, “Small-Signal Model Parameter Extraction of E–Mode N-Polar GaN MOS-HEMT using Optimization Algorithms and its Comparison,” Journal of Semiconductors (IOP Science), Vol. 39, No. 7, pp. 074001-8, 2018. DOI: 10.1088/1674-4926/39/7/000000. ISSN: 1674-4926 [Q2, Scopus, WoS-ESCI]
  7. M. Krishnasamy, T. R. Lenka, “An analytical model with two degree of freedom of piezo-magneto-elastic energy harvester for low frequency wide bandwidth applications,” IET Micro & Nano Letters, pp. 1-5, Mar 2018. DOI: 10.1049/mnl.2017.0633. ISSN: 1750-0443. [IF: 0.975, Q3, SCIE]
  8. S. Vallisree, A. Ghosh, R. Thangavel, T. R. Lenka, “Theoretical investigations on enhancement of photovoltaic efficiency of nanostructured CZTS/ZnS/ZnO based Solar Cell device,” Journal of Materials Science: Materials in Electronics (Springer), Vol. 29, No. 9, pp.7262–7273, 2018. DOI: 10.1007/s10854-018-8715-y. ISSN: 0957-4522. [IF: 2.09, Q2, SCI]
  9. B. Shougaijam, C. Ngangbam, T. R. Lenka, “Enhancement of Broad Light Detection based on Annealed Al-NPs Assisted TiO2-NWs Deposited on p-Si by GLAD Technique,” IEEE Transactions on Nanotechnology, Vol. 17, No. 2, pp. 285-292. 2018, DOI: 10.1109/TNANO.2018.2795344. ISSN: 1536-125X. [IF: 2.485, Q2, SCI]
  10. D. Panda, T. R. Lenka, “Investigation of Gate Induced Noise in E-mode GaN MOS-HEMT and its Effect on Noise Parameters,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), Vol. 31, Issue. 5, pp.1-15, 2018, DOI: 10.1002/jnm.2318. ISSN: 1099-1204. [IF: 1.26 (2020), Q3, SCI]
  11. S. R. Routray, T. R. Lenka, “InGaN-based Solar Cells: A Wide Solar Spectrum Harvesting Technology for 21st Century,” CSI Transactions on ICT (Springer), Vol. 6, No. 1, pp. 83-96, Mar 2018. DOI: 10.1007/s40012-017-0181-9. ISSN: 2277-9086. [INSPEC]
  12. M. Krishnasamy, Feng Qian, Lei Zuo, T. R. Lenka, “Distributed Parameter Modeling to Prevent Charge Cancellation for Discrete Thickness Piezoelectric Energy Harvester,” Solid-State Electronics (Elsevier), Vol. 141, March 2018, pp. 74-83. DOI: 10.1016/j.sse.2017.12.010. ISSN: 0038-1101. [IF: 1.666, Q2, SCI] 

2017

  1. D. Panda, T. R. Lenka, “Oxide Thickness Dependent Compact Model of Channel Noise for E-Mode AlGaN/GaN MOS-HEMT,” AEU-International Journal of Electronics and Communications (Elsevier), Vol. 82, pp. 467–473, Dec 2017, DOI: 10.1016/j.aeue.2017.09.025. ISSN: 1434-8411. [Q2, SCI]
  2. G. Amarnath and T. R. Lenka, “Analytical model development for unified 2D electron gas sheet charge density of AlInN/GaN MOSHEMT,” International Journal of Electronics and Telecommunications, Vol. 63, No. 4, pp.363-368, 2017. DOI: 10.1515/eletel-2017-0049. ISSN: 2081-8491. [Q4, Scopus, WOS-ESCI]
  3. D. K. Panda, T. R. Lenka, “Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT,” Superlattices and Microstructures (Elsevier), Vol. 112, pp. 374-382, Sept 2017, DOI: 10.1016/j.spmi.2017.09.045. ISSN: 0749-6036. [IF: 1.885, Q2, SCI]
  4. M. Krishnasamy, T. R. Lenka, “Distributed parameter modeling for autonomous charge extraction of various multilevel segmented piezoelectric energy harvesters,” Microsystem Technologies (Springer), pp.1-11, Sept 2017, DOI: 10.1007/s00542-017-3559-6. ISSN: 0946-7076. [IF: 1.513, Q2, SCI]
  5. G. Amarnath, D. Panda and T. R. Lenka, “Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT,” International Journal of RF and Microwave Computer-Aided Engineering (Wiley), Vol. 28, Issue. 2, pp. 1-9, Sept 2017. DOI: 10.1002/mmce.21179. ISSN: 1096-4290. [Q2, SCIE]
  6. Baidya, S. Baishya, T. R. Lenka, “Impact of Thin High-K Dielectrics and Gate Metals on RF Characteristics of 3D Double Gate Junctionless Transistor,” Materials Science in Semiconductor Processing (Elsevier), Vol. 71, pp. 413–420, 2017. DOI: 10.1016/j.mssp.2017.08.031. ISSN: 1369-8001. [IF: 1.955, Q1, SCI]
  7. S. R. Routray, B. Shougaijam, T. R. Lenka, “Exploiting Polarization Charges for High Performance (000-1) facet GaN/InGaN/GaN Core/Shell/Shell Triangular Nanowire Solar Cell,” IEEE Journal of Quantum Electronics, Vol. 53, Issue. 5, pp. 1-8, July 2017. DOI: 10.1109/JQE.2017.2734078. ISSN: 0018-9197. [IF: 1.887, Q1, SCI]
  8. S. R. Routray, T. R. Lenka, “Performance Analysis of Nanodisk and Core/Shell/Shell-Nanowire type III-Nitride Heterojunction Solar Cell for Efficient Energy Harvesting,” Superlattices and Microstructures (Elsevier), Vol.111, pp. 776-782, July 2017. DOI: 10.1016/j.spmi.2017.07.038. ISSN: 0749-6036. [IF: 1.885, Q2, SCI]
  9. S. R. Routray, T. R. Lenka, “Spontaneous and Piezo-phototronics Effect on Geometrical Shape of III-Nitride Wurtzite Nanowires for High Efficiency Photovoltaic Applications,” IET Micro & Nano Letters, Vol. 12, Issue. 12, pp. 924 – 927, June 2017. DOI: 10.1049/mnl.2017.0403. ISSN: 1750-0443. [IF: 0.841, SCIE]
  10. G. Amarnath, R. Swain and T. R. Lenka, “Modeling and Simulation of 2DEG Density and Intrinsic Capacitances in AlInN/GaN MOSHEMT,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), Vol. 31, Issue. 1, pp.1-8, July 2017. DOI: 10.1002/jnm.2268. ISSN: 1099-1204. [IF: 1.26 (2020), Q3, SCI]
  11. M. Krishnasamy, T. R. Lenka, “Distributed Parameter Model for Assorted Piezoelectric Harvester to Prevent Charge Cancellation,” IEEE Sensors Letters, Vol. 1, Issue. 3, pp.1-4, June 2017. DOI: 10.1109/LSENS.2017.2705348. ISSN: 2475-1472. [Q2, SCIE]
  12. B. Shougaijam, C. Ngangbam, T. R. Lenka, “Plasmon Sensitized Optoelectronic Properties of Au Nanoparticles assisted Vertically Aligned TiO2 Nanowires by GLAD Technique,” IEEE Transactions on Electron Devices, Vol. 64, No.3, pp. 1127-1133, 2017. DOI: 10.1109/TED.2017.2648500, ISSN: 00189383. [IF: 2.605, Q1, SCI]
  13. S. R. Routray, T. R. Lenka, “Effect of Metal-fingers/doped-ZnO Transparent Electrode on Performance of GaN/InGaN Solar Cell,” Journal of Semiconductors (IOP Science), Vol. 38, No. 9, pp. 1-7, 2017. DOI: 10.1088/1674-4926/38/9/09xxxx. ISSN: 16744926. [Q2, Scopus, WoS-ESCI]
  14. D. K. Panda, T. R. Lenka, “Modeling and Simulation of Enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF Circuit Switch Applications,” Journal of Semiconductors (IOP Science), Vol. 38, No. 6, pp. 064002:1-6, 2017. DOI: 10.1088/1674-4926/38/6/06xxxx. [Q2, Scopus, WoS-ESCI]
  15. B. Shougaijam, R. Swain, C. Ngangbam, T. R. Lenka, “Electrical Characteristics of MOS Device with annealed TiO2 Nanowires based Dielectric,” Journal of Semiconductors (IOP Science), Vol. 38, No. 5, 2017. DOI: 10.1088/1674-4926/38/5/05xxxx. [Q2, Scopus, WoS-ESCI]
  16. R. Swain, K. Jena, T. R. Lenka, “Modeling of Capacitance and Threshold Voltage for ultra-thin normally-off AlGaN/GaN MOSHEMT,” Pramana-Journal of Physics (Springer), Vol. 88, No. 3, pp. 3-7, 2017. DOI: 10.1007/s12043-016-1310-y, ISSN: 0304-4289. [IF: 0.649, Q2, SCI] 

2016

  1. B. Shougaijam, R. Swain, C. Ngangbam, T. R. Lenka, “Enhanced Photodetection by Glancing Angle Deposited Vertically Aligned TiO2 Nanowires,” IEEE Transactions on Nanotechnology, Vol. 15, Issue. 3, pp. 389–394, May 2016. DOI: 10.1109/TNANO.2016.2536162, ISSN: 1536125X. [IF: 2.485, Q2, SCI]
  2. R. Kashyap, T. R. Lenka, S. Baishya, “Distributed Parameter Modeling of Cantilevered d33 Mode Piezoelectric Energy Harvesters,” IEEE Transactions on Electron Devices, Vol. 63, No. 3, pp.1281-1287, Jan, 2016. DOI: 10.1109/TED.2015.2514160, ISSN: 0018-9383. [IF: 2.605, Q1, SCI]
  3. R. Swain, K. Jena, T. R. Lenka, “Modeling of forward gate leakage current in MOSHEMT using Trap Assisted Tunneling and Poole-Frenkel Emission,” IEEE Transactions on Electron Devices, Vol. 63, Issue. 3, pp. 2346-2352, 2016. DOI: 10.1109/TED.2016.2555851, ISSN: 0018-9383. [IF: 2.605, Q1, SCI]
  4. K. Jena, R. Swain, and T. R. Lenka, “Effect of thin gate dielectrics on DC, RF and Linearity Characteristics of Lattice-Matched AlInN/AlN/GaN MOSHEMT,” IET Circuits, Devices & Systems, Vol. 10, No. 5, pp. 423-432, 2016. DOI: 1049/iet-cds.2015.0332, ISSN: 1751-858X. [IF: 1.395, Q3, SCI]
  5. A. Baidya, T. R. Lenka, S. Baishya, “Mixed-mode simulation and analysis of 3D double gate junctionless nanowire transistor for CMOS circuit applications,” Superlattices and Microstructures (Elsevier), Vol. 100, pp.14-23, Dec 2016. (Elsevier), DOI: 10.1016/j.spmi.2016.08.028, ISSN: 0749-6036. [IF: 1.885, Q2, SCI]
  6. R. Swain, K. Jena, T. R. Lenka, “Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT,” Materials Science in Semiconductor Processing (Elsevier), Vol. 53, pp. 66-71, Oct 2016. DOI: 10.1016/j.mssp.2016.06.008. ISSN: 1369-8001. [IF: 1.955, Q1, SCI]
  7. R. Swain, K. Jena and T. R. Lenka, “Model Development for I-V and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT,” Semiconductors (Springer), Vol. 50, No. 3, pp. 384–389. 2016. ISSN 1063-7826. DOI: 10.1134/S1063782616030210. [IF: 0.739, Q3, SCI]
  8. K. Jena, R. Swain, and T. R. Lenka, “Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT,” Journal of Electronic Materials (Springer), Vol. 45, Issue 4, pp. 2172–2177, Apr 2016, DOI: 10.1007/s11664-015-4296-1. ISSN: 0361-5235. [IF: 1.938, Q2, SCI]
  9. D. Panda, K. Jena, R. Swain, T. R. Lenka, “Modeling on Oxide Dependent 2DEG Sheet Charge Density and Threshold Voltage in AlGaN/GaN MOSHEMT,” Journal of Semiconductors (IOP Science), Vol. 37, No. 4, pp. 044003-1-6, April 2016. DOI: 10.1088/issn.1674-4926, Print ISSN: 1674-4926. [Q2, Scopus, WoS-ESCI]
  10. K. Jena, R. Swain, T. R. Lenka, “Modeling and Comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), Vol. 29, Issue. 1, pp. 83-92, Feb 2016, DOI: 10.1002/jnm.2048. ISSN: 1099-1204. [IF: 1.26 (2020), Q3, SCI] 

2015

  1. R. Kashyap, T. R. Lenka, S. Baishya, “A Model for Doubly Clamped Piezoelectric Energy Harvesters with Segmented Electrodes,” IEEE Electron Device Letters, Vol. 36, No. 12, pp. 1369 – 1372, Dec 2015. DOI: 10.1109/LED.2015.2496186. ISSN: 0741-3106. [Q1, SCI]
  2. K. Jena, R. Swain, and T. R. Lenka, “Impact of a Drain Field Plate on the Breakdown Characteristics of AlInN/GaN MOSHEMT,” Journal of the Korean Physical Society (Springer), Vol. 67, No. 9, pp. 1592-1596, Nov 2015. DOI: 10.3938/jkps.67.1592. ISSN: 0374-4884. [IF: 0.418, Q4, SCI]
  3. K. Jena, R. Swain, T. R. Lenka, “Physics-Based Mathematical Model of 2DEG Sheet Charge Density and DC Characteristics of AlInN/AlN/GaN MOSHEMT,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), Vol. 30, Issue. 1, pp. 1-11, Oct 2015. DOI: 10.1002/jnm.2117. ISSN: 1099-1204. [IF: 1.26 (2020), Q3, SCI]
  4. R. Swain, J. Panda, K. Jena and T. R. Lenka, “Modeling and Simulation of Oxide Dependent 2DEG Sheet Charge Density in AlGaN/GaN MOSHEMT,” Journal of Computational Electronics (Springer), Vol.14, No. 3, pp. 754-761, Sept 2015. DOI: 10.1007/s10825-015-0711-3.ISSN: 1569-8025. [IF: 1.520, Q2, SCIE]
  5. R. Swain, K. Jena and T. R. Lenka, “Interface DOS Dependent Analytical Model Development for DC Characteristics of Normally-off AlN/GaN MOSHEMT,” Superlattices and Microstructures (Elsevier), Vol. 84, pp.54-65, 2015. DOI: 10.1016/j.spmi.2015.04.025, ISSN: 0749-6036. [IF: 1.885, Q2, SCI]
  6. K. Jena, R. Swain, T. R. Lenka, “Impact of barrier thickness on gate capacitance—Modeling and Comparative analysis of GaN based MOSHEMTs,” Journal of Semiconductors (IOP Science), Vol. 36, Issue 3, pp.034003-5, Mar 2015. DOI: 10.1088/1674-4926/36/3/034003. ISSN: 1674-4926. [Q2, Scopus, WoS-ESCI]
  7. K. Jena, R. Swain, T. R. Lenka, “Impact of oxide thickness on gate capacitance—Modeling and Comparative Analysis of GaN based MOSHEMTs,” Pramana-Journal of Physics (Springer), Vol. 85, No. 6, pp. 1221–1232, Dec 2015. DOI: 10.1007/s12043-015-0948-1. ISSN: 0304-4289. [IF: 0.649, Q2, SCI]
  8. A. Baidya, V. Krishnan, S. Baishya, T. R. Lenka, “Effect of Thin Gate Dielectrics and Gate Materials on Simulated Device Characteristics of 3D Double Gate JNT,” Superlattices and Microstructures (Elsevier), Vol. 77, pp.209–218, Jan 2015. DOI: 10.1016/j.spmi.2014.11.007, ISSN: 0749-6036. [IF: 1.885, Q2, SCI]
  9. D. Pandey, T. R. Lenka, “A Model Predicting Sheet Charge Density and Threshold Voltage with dependence on Interface States Density in LM-InAlN/GaN MOSHEMT”, Semiconductors (Springer), Vol. 49, No. 4, pp. 513–518, 2015. DOI: 10.1134/S1063782615040168. ISSN: 1063-7826, USA. [IF: 0.739, Q3, SCI] 

2014

  1. D. Pandey, T. R. Lenka, “Model Development for Analyzing 2DEG Sheet Charge Density and Threshold Voltage considering Interface DOS for AlInN/GaN MOSHEMT,” Journal of Semiconductors (IOP Science), Vol. 35, No. 10, pp. 104001-4, Oct 2014. DOI: 10.1088/1674-4926/35/10/104001. ISSN: 1674-4926. [Q2, Scopus, WoS-ESCI]
  2. A Bhattacharjee, D Pandey, R. Lenka, “An Investigation of Novel Characteristics of ultrathin Al0.2Ga0.8N/GaN MOSHEMT having 20nm Gate length and SiO2 Gate Dielectric,” Journal of Electron Devices, Vol. 19, pp. 1674-1679, 2014. ISSN: 1005-9490, China. [Scopus]
  3. A. Bhattacharjee, T. R. Lenka, “Performance Analysis of 20nm Gate Lenth In0.2Al0.8N/GaN HEMT with Cu-Gate having a Remarkable High ION/IOFF Ratio,” Journal of Semiconductors (IOP Science), Vol. 35, No. 6, pp. 064002-6, 2014. DOI: 10.1088/1674-4926/35/6/064002. ISSN: 1674-4926. [Q2, Scopus, WoS-ESCI]

2013

  1. T. R. Lenka, G. N. Dash, A. K. Panda, “RF and Microwave Characteristics of 10nm thick InGaN-Channel Gate Recessed HEMT,” Journal of Semiconductors (IOP Science), Vol. 34, No. 11, pp. 114003-1-6, Nov 2013. DOI: 10.1088/1674-4926/34/11/11400. ISSN: 1674-4926. [Q2, Scopus, WOS-ESCI]
  2. A. R. Dash, T. R. Lenka, “VLSI Implementation of Reed-Solomon Encoder Algorithm for Communication Systems,” Radioelectronics and Communications Systems (Springer), Vol. 56, No. 9, pp. 441-447, Sept 2013. DOI: 10.3103/S0735272713090033. ISSN: 0735-2727, USA.[Q4, Scopus] 

2012

  1. T. R. Lenka, A. K. Panda, “AlGaN/GaN-based HEMT on SiC-Substrate for Microwave Characteristics using different Passivation Layers,” Pramana-Journal of Physics (Springer), Vol. 79, No.1, pp.151-163, 2012. DOI: 10.1007/s12043-012-0290-9. ISSN: 0304-4289.[IF: 0.649, Q2, SCI]
  2. T. R. Lenka, G. N. Dash, A. K. Panda, “A Comparative 2DEG Study of InxAl1-xN/ (In, Al, Ga) N/GaN-based HEMTs,” Physics Procedia (Elsevier), Vol. 25, pp. 36-43, 2012. DOI: 10.1016/j.phpro.2012.03.046. ISSN: 1875-3884, Netherlands. [Scopus]
  3. T. R. Lenka, S. Das, R Ku Nayak, G N Dash, A K Panda, “Study of interface sheet charge density of AlGaAs/InGaAs/GaAs-based pseudomorphic HEMT,” Asian Journal of Physics, Vol. 21, No 2, 187-192, 2012.

2011

  1. T.R. Lenka, and A. K. Panda, “Role of Nanoscale AlN and InN for the Microwave Characteristics of AlGaN/ (Al, In) N/GaN – based HEMT,” Semiconductors (Springer), Vol. 45, No. 9, pp.1211-1218, Sept 2011. DOI: 10.1134/S1063782611090156. ISSN: 1063-7826. [IF: 0.739, Q3, SCI]
  2. T. R. Lenka, and A. K. Panda, “Characteristics Study of 2DEG Transport Properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT,” Semiconductors (Springer), Vol. 45, No. 5, pp.660-665, May 2011. DOI: 10.1134/S1063782611050198. ISSN: 1063-7826. [IF: 0.739, Q3, SCI]
  3. T. R. Lenka, and A K Panda, “Effect of Structural Parameters on 2DEG Density and C~V Characteristics of AlxGa1-xN/AlN/GaN-based HEMT,” Indian Journal of Pure and Applied Physics (NISCAIR), Vol. 49, No. 6, pp.416-422, June 2011. ISSN: 0019-5596. [IF: 0.923, Q3, Scopus, JCR, WOS]

2010

  1. T. R. Lenka, A. K. Panda, “Self-consistent Subband Calculations of AlxGa1-xN/(AlN)/GaN-based High Electron Mobility Transistor,” Advanced Materials Research (Trans Tech), Vol. 159, pp. 342-347, Dec 2010. DOI: 10.4028/www.scientific.net/AMR.159.342. ISSN: 1022-6680, Germany. [Scopus]
  2. T. R. Lenka, A. K. Panda, “Effect of Nanoscale AlN layer for improving 2DEG Transport properties in AlGaN/AlN/GaN-based HEMT,” International Journal of Pure and Applied Physics, Vol. 6, No. 4, pp.419-427, 2010.
  3. T. R. Lenka, A. K. Panda, “Polarization Dependent Capacitance Voltage Analysis of GaN-based Heterostructure Field Effect Transistor,” International Journal of Materials Sciences, Vol. 5, No. 5, pp. 747-758, 2010.

2009

  1. T. R. Lenka, R. K. Misra, A. K. Panda, “RF Characteristics Study of AlxGa1-xAs/InxGa1-xAs/GaAs based Pseudomorphic High Electron Mobility Transistor,” International Journal of Electronics and Electrical Engineering (IJEEE), Vol. 4, No. 6, pp. 28-35, 2009.
  2. T. R. Lenka, A. K. Panda, “Characteristics Study of Modulation Doped GaAs/InxGa1-xAs/AlxGa1-xAs based Pseudomorphic HEMT,” International Journal of Recent Trends in Engineering, Vol. 1, No. 3, pp. 186-190, 2009.
  3. T. R. Lenka, C. K. Jha, “DFT based Implementation of Spatial-to-Frequency Domain Transformation of Image using VHDL,” International Journal of Electronics Engineering, Vol.1 (1), pp. 37-39, 2009.

NATIONAL JOURNALS:

  1. T. R. Lenka, A. K. Panda, “Breakdown Characteristics of Modulation Doped GaAs/InxGa1-xAs/AlxGa1-xAs based Pseudomorphic HEMT,” Orissa Journal of Physics, Vol.16, No.1, pp. 139-148. 2009.
  2. T. R. Lenka, A. K. Panda, “Characteristics Study of GaAs based Pseudomorphic HEMT,” Journal of Information Communication Technology, Vol. 2, No. 1, pp.159-162, 2009.

 

INTERNATIONAL CONFERENCES:

2021

  1. Rabin Paul, T. R. Lenka, and F. A. Talukdar, “Performance Improvement of CZTSSe Solar Cell by using Mg-doped ZnO as Window Layer,” 2021 IEEE 18th India Council International Conference (INDICON), 19-21 Dec 2021. (IEEE Xplore) [Scopus]
  2. Samadrita Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, B. Jain, and H. P. T. Nguyen, “Performance Enhancement of AlInGaN Quantum Well based UV-LED,” 2021 IEEE 18th India Council International Conference (INDICON), 19-21 Dec 2021. (IEEE Xplore) [Scopus]
  3. Samadrita Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, B. Jain, H. P. T. Nguyen, and G. Crupi, “Effects of Spontaneous Polarization on Luminous Power of GaN/AlGaN Multiple Quantum Well UV-LEDs for Light Technology,” 2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS 2021), Serbia, Nis, 20-22 Oct 2021, pp. 335-338, doi: 10.1109/TELSIKS52058.2021.9606406. (IEEE Xplore) [Scopus]
  4. Rajan Singh, T. R. Lenka, S. A. Ahsan, H. P. T. Nguyen, “Analytical Study of Conduction Band Discontinuity supported 2DEG Density in AlN/Ga2O3 HEMT,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems (MNDCS-2021), 29-31 Jan 2021, NIT Silchar. [Scopus]
  5. S. Vallisree and T. R. Lenka, “EQE Analysis of HIT-CZTS Tandem Solar Cell towards Minimizing Current Losses,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems (MNDCS-2021), 29-31 Jan 2021, NIT Silchar. [Scopus]
  6. A. Srivastava, S. K. Tripathy and T. R. Lenka, “SCAPS-1D simulations for comparative study of alternative absorber materials Cu2XSnS4 (X= Fe, Mg, Mn, Ni, Sr) in CZTS based Solar Cells,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems (MNDCS-2021), 29-31 Jan 2021, NIT Silchar. [Scopus]
  7. M. Krishnasamy, J. R. Shinde, H. P. Mohammad, G. Amarnath, and T. R. Lenka, “Design and Analysis of FEM Novel X-Shaped Broadband Linear Piezoelectric Energy Harvester,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems (MNDCS-2021), 29-31 Jan 2021, NIT Silchar. DOI: 10.1007/978-981-16-3767-4_39. [Scopus]

2020

  1. M. Krishnasamy, J. R. Shinde, H. P. Mohammad, U. Deepesh and T. R. Lenka, “Design and Simulation of Smart Flooring Tiles using Two-Phased Triangular Bimorph Piezoelectric Energy Harvester,” 2020 IEEE-HYDCON, Hyderabad, India, 2020, pp. 1-4, doi: 10.1109/HYDCON48903.2020.9242839. (IEEE Xplore) [Scopus]
  2. Y. Agarwal, B. Das, A. J. Dutta, A. A. Deka, S. K. Tripathy, T. R. Lenka, P. S. Menon, F. Lin, A. G. Aberle, “Numerical Simulation of Tunneling Effect in High-Efficiency Perovskite/Silicon Tandem Solar Cell,” 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), Calgary, AB, Canada, June 15- Aug 21, 2020, pp. 1318-1322, doi: 10.1109/PVSC45281.2020.9300412. (IEEE Xplore) [Scopus]

2019

  1. R. Singh, T. R. Lenka, R. T. Velpula, H. Q. T. Bui and H. P. T. Nguyen, “Investigation of E-Mode Beta-Gallium Oxide MOSFET for Emerging Nanoelectronics,” IEEE Nanotechnology Materials and Devices Conference 2019 (IEEE NMDC 2019), 27-30 Oct 2019, Stockholm, Sweden. DOI: 10.1109/NMDC47361.2019.9084013. (IEEE Xplore) [Scopus]
  2. T. R. Lenka, A. C. Soibam, S. K. Tripathy, K. Dey, P. S. Menon, M. Thway, F. Lin, A. G. Aberle, “Device Modeling for High Efficiency Lead Free Perovskite Solar Cell with Cu2O as Hole Transport Material,” 2019 IEEE 14th Nanotechnology Materials and Devices Conference (IEEE NMDC 2019), Stockholm, Sweden, 27-30 Oct 2019, pp. 1-4, DOI: 10.1109/NMDC47361.2019.9084004. (IEEE Xplore) [Scopus]

2018

  1. S. R. Routray, T. R. Lenka, “Effects of Stress and Strain Distribution on Performance Analysis of GaN/InGaN/GaN Core/Shell/Shell Radial Nanowires for Solar Energy Harvesting,” 5th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) 2018, 19-21 Mar 2018, Granada, Spain. DOI: 10.1109/ULIS.2018.8354746 (IEEE Xplore) [Scopus]
  2. S. Vallisree, T. Rajalingam, T. R. Lenka, “Modelling of CZTS/ZnS/AZO solar cell for Efficiency Enhancement,” 2018 3rd International Conference on Microwave and Photonics (ICMAP 2018), 9-11 Feb, 2018. DOI: 10.1109/ICMAP.2018.8354643. (IEEE Xplore) [Scopus]

2017

  1. D. K. Panda and T. R. Lenka, “Device Optimization of E-Mode N-Polar GaN MOS-HEMT for Low Noise RF & Microwave Applications,” XIX International Workshop on the Physics of Semiconductor Devices 2017 (IWPSD 2017), 12-15 Dec 2017.
  2. R. Paswan, D. K. Panda and T. R. Lenka, “Dielectric Modulated AlGaAs/GaAs HEMT for Label Free Detection of Biomolecules,” XIX International Workshop on the Physics of Semiconductor Devices 2017 (IWPSD 2017), 12-15 Dec 2017.
  3. M. Krishnasamy, T. R. Lenka, “Nonlinear Broadband Piezo-Magneto-Elastic Energy Harvester in Bistable and Monostable Configurations,” Proceedings of 3rd International Conference on Nanotechnology for Instrumentation & Measurement Workshop (Nanofim) 2017, 16-17 Nov 2017, G.B. University, Gr. Noida, India.
  4. D. K. Panda, A. Kumar, T. R. Lenka, “Gate Current Low Frequency Noise Model for High-K GaN MOS-HEMT,” Proceedings of 3rd International Conference on Nanotechnology for Instrumentation & Measurement Workshop (Nanofim) 2017, 16-17 Nov 2017, G.B. University, Gr. Noida, India.
  5. B. Shougaijam, C. Ngangbam, and T. R. Lenka, “Morphology, Structural and Optical Analysis of Au Nanoparticle Assisted TiO2 Nanowires for Opto-Nanoelectronic Applications,” IEEE NMDC 2017, 2-4 Oct 2017, Singapore. DOI: 10.1109/NMDC.2017.8350532. (IEEE Xplore) [Scopus]
  6. S. R. Routray, T. R. Lenka, “Polarization Charges in High Performance GaN/InGaN/GaN Core/Shell/Shell Nanowire for Solar Energy Harvesting,” IEEE NMDC 2017, 2-4 Oct 2017, Singapore. DOI: 10.1109/NMDC.2017.8350484. (IEEE Xplore) [Scopus]
  7. S. R. Routray, T. R. Lenka, “Design and Simulation of GaN/InGaN Core/Shell/Shell Radial Nanowires for Solar Energy Harvesting,” IEEE NMDC 2017, 2-4 Oct 2017, Singapore. DOI: 10.1109/NMDC.2017.8350486. (IEEE Xplore) [Scopus]
  8. Krishanu Dey and R. Lenka, “Simulation of High Efficiency InGaP/InP Tandem Solar Cells Under Flat Plate and Concentrator Conditions,” IEEE International Conference on Microelectronics Devices Circuits and Systems (ICMDCS 2017), 10-12 Aug, 2017, VIT, Vellore, India. DOI: 10.1109/ICMDCS.2017.8211717. (IEEE Xplore) [Scopus]
  9. Vallisree S., T. Rajalingam, R. Lenka, “Comparative Characteristics Study of the Effect of Various Gate Dielectrics on ZnO TFT,” IEEE International Conference on Energy, Communication, Data Analytics and Soft Computing (ICECDS-2017), 1-2 Aug 2017. DOI: 10.1109/ICECDS.2017.8390197. (IEEE Xplore) [Scopus]

2016:

  1. A. Baidya, T R Lenka, S. Baishya, “Application of 3D double gate Junctionless transistor for ring oscillator,” 2016 IEEE International Conference on Recent Advances and Innovations in Engineering (ICRAIE), 23-25 Dec. 2016, India. DOI: 10.1109/ICRAIE.2016.7939580. (IEEE Xplore) [Scopus]
  2. S. Routray and T. R. Lenka, “Numerical Study of the Influence of Polarization Charges on the Performance of GaN/InGaN Nanowire Solar Cells,” Proceedings of Materials Today-2nd International Conference on Solar Energy Photovoltaic, 17–19 December 2016, Bhubaneswar, India.
  3. B. Shougaijam, C. Ngangbam, and T. R. Lenka, “Fast Response Time Photodetector Based on Annealed TiO2 Nanowires Deposited by GLAD,” IEEE TENCON 2016, 22-25 Nov 2016, Singapore. DOI: 10.1109/TENCON.2016.7848542. (IEEE Xplore) [Scopus]
  4. K. Jena and T. R. Lenka, “Effect of AlN Spacer Thickness on Device Characteristics of AlInN/AlN/GaN MOSHEMT,” IEEE TENCON 2016, 22-25 Nov 2016, Singapore. DOI: 10.1109/TENCON.2016.7848652. (IEEE Xplore) [Scopus]
  5. R. Kashyap, T. R. Lenka, S. Baishya, “Study of doubly clamped piezoelectric beam energy harvesters with non-traditional geometries,” 7th International Conference on Power Electronics (IICPE 2016), 17-19 Nov. 2016, DOI: 10.1109/IICPE.2016.8079535. (IEEE Xplore) [Scopus]

2015:

  1. B. Shougaijam, R. Swain, C. Ngangbam, and T. R. Lenka. “Enhanced Visible Light Detection by Vertically Aligned TiO2 Nanowires using Glancing Angle Deposition Technique,” Abstract proceedings of IWPSD 2015, pp. 283, 7-10 Dec, 2015.
  2. R. Swain, T. R. Lenka, “Comparative study of critical barrier thickness for normally-off GaN-MOSHEMTs,” Abstract proceedings of IWPSD 2015, pp.578, 7-10 Dec, 2015.
  3. K. Jena and T. R. Lenka, “Influence of AlN Spacer Layer on Electrical Characteristics of Lattice-Matched AlInN/AlN/GaN MOSHEMT,” Abstract proceedings of IWPSD 2015, pp.579, 7-10 Dec, 2015.
  4. T. R. Lenka, N. V. Deshpande, “High-performance computing facility for North East India through Information and Communication Technology,” 6th International Multi-Conference on Complexity, Informatics and Cybernetics, IMCIC 2015 and 6th International Conference on Society and Information Technologies, ICSIT 2015 – Proceedings, 2015, 2, pp. 81–85. [Scopus]
  5. R. Swain, T. R. Lenka, “Investigation of Critical Barrier Thickness in LM-InAlN/GaN MOSHEMT towards Normally-off Operation,” IEEE TENCON 2015, 1-4 Nov 2015, Macau. DOI: 10.1109/TENCON.2015.7373087. (IEEE Xplore) [Scopus]
  6. A. Baidya, T. R. Lenka, S. Baishya, “Performance analysis and improvement of nanoscale double gate Junctionless based inverter using high-k gate dielectrics,” IEEE TENCON 2015, 1-4 Nov 2015, Macau. DOI: 10.1109/TENCON.2015.7373040. (IEEE Xplore) [Scopus]
  7. R. Swain, K. Jena, T. R. Lenka, G. N. Dash, A K Panda, “DC & RF Characteristics of normally-off AlN/GaN MOSHEMT by varying Oxide Thickness,” IEEE International Conference on Electron Devices and Solid-State Circuits 2015, Singapore, 1-4 June 2015. DOI: 10.1109/EDSSC.2015.7285135. (IEEE Xplore) [Scopus]
  8. R. Swain, T. R. Lenka, “Normally-off Al0.25Ga0.75N/GaN MOSHEMT with Stack Gate Dielectric Structure,” IEEE International Conference on Electron Devices and Solid-State Circuits 2015, Singapore, 1-4 June 2015. DOI: 10.1109/EDSSC.2015.7285177. (IEEE Xplore) [Scopus]
  9. J. Panda, R. Swain, G. S. Rao, T. R. Lenka, “Realization of Improved Transconductance and Capacitance Characteristics in Al0.3Ga0.7N/AlN/GaN HEMT,” 2015 IEEE International Conference on Electrical Electronics Signal Communication Optimization (EESCO 2015), 24-25 Jan 2015. DOI: 10.1109/EESCO.2015.7253989. (IEEE Xplore). [Scopus]
  10. J. Panda, T. R. Lenka, “Comparative Analysis of GaN based MOSHEMT Devices for RF Applications,” 2015 IEEE International conference on Electrical Computer and Communication Technologies (ICECCT 2015), 5-7 Mar 2015. DOI: 10.1109/ICECCT.2015.7226141. (IEEE Xplore) [Scopus]
  11. T. R. Lenka, N. V. Deshpande, “High Performance Computing Facility for North East India through Information and Communication Technology,” Proceedings of ICSIT 2015, Mar 10-13, 2015, Orlando, Florida, USA. [Scopus]
  12. G. Amarnath, G. Srinivas, T. R. Lenka, “374GHz cutoff frequency of ultra-thin InAlN/AlN/GaN MIS HEMT,” IEEE International Conference on Computer Communication and Informatics 2015, 8-10 Jan 2015, DOI: 10.1109/ICCCI.2015.7218141. (IEEE Xplore) [Scopus]
  13. G. Amarnath, G. Srinivas, T. R. Lenka, “Electrical characteristics and 2DEG properties of passivated InAlN/AlN/GaN HEMT,” IEEE International Conference on Computer Communication and Informatics 2015, 8-10 Jan 2015, DOI: 10.1109/ICCCI.2015.7218142. (IEEE Xplore) [Scopus]

2014

  1. T. R. Lenka, G. N. Dash, A. K. Panda, “2DEG Transport Characteristics by Self-consistent Subband Calculations of Schrödinger and Poisson Equations in InAlN/GaN HEMT,” IEEE Nanotechnology Materials and Devices Conference 2014, 12-15 Oct 2014, Aci Castello, Italy, pp. 124 – 127, DOI: 10.1109/NMDC.2014.6997438. (IEEE Xplore) [Scopus]
  2. R. Swain, K. Jena, A. Gaini and T. R. Lenka, “Comparative Study of AlN/GaN HEMT and MOSHEMT Structures by varying Oxide Thickness,” IEEE Nanotechnology Materials and Devices Conference 2014, 12-15 Oct 2014, Aci Castello, Italy, pp. 128 – 131, DOI: 10.1109/NMDC.2014.6997439. (IEEE Xplore) [Scopus]
  3. A Bhattacharjee, R. Lenka, “RF and Microwave characteristics of a 20nm Gate Length InAlN/GaN based HEMT having a High Figure of Merit,” IEEE International Conference on Devices, Circuits and Systems – ICDCS 2014, 6-8 Mar, 2014, Coimbatore, TN, India. DOI: 10.1109/ICDCSyst.2014.6926151. (IEEE Xplore) [Scopus]
  4. A Bhattacharjee, R. Lenka, “Insight to the 2DEG Transport and Mobility Effects of a 20nm Recessed Gate InAlN/AlN/GaN HEMT,” IEEE International Conference on Electronics and Communication Systems, 13-14 Feb 2014, Coimbatore, TN, India. DOI: 10.1109/ECS.2014.6892645. (IEEE Xplore) [Scopus]
  5. D. Sahoo, T. R. Lenka, “RF Characteristics and Mobility Performance of a 30nm Gate Length E-mode Junctionless Nanowire Transistor,” IEEE International Conference on Electronics and Communication Systems, 13-14 Feb 2014, Coimbatore. DOI: 10.1109/ECS.2014.6892735. (IEEE Xplore) [Scopus]

2013

  1. T. R. Lenka, G. N. Dash and A. K. Panda, “2DEG Transport in Gate Recessed AlGaN/InGaN/GaN HEMT,” 2013 IEEE International Conference on EDSSC, Hong Kong, 3-5 June 2013. DOI: 10.1109/EDSSC.2013.6628042. (IEEE Xplore) [Scopus]

2012

  1. B. K. Parida and T. R. Lenka, “Design and Implementation of Reed-Solomon Encoder using Cadence Tool”, Proceedings of 1st International Conference on Computing, Communication and Sensor Networks-CCSN-2012, 23-24 Nov, 2012, PIET, Rourkela.
  2. P. K. Dehury, T. R. Lenka, “Advance Error Correction Code based Online Error Detection & Correction Scheme for Embedded memory,” Proceedings of 1st International Conference on Computing, Communication and Sensor Networks 2012, 23-24 Nov, 2012, Rourkela.

2011

  1. T. R. Lenka and A. K. Panda, “Polarization Induced 2DEG Study of Strained Al1-xInxN/GaN-based HEMT,” Proceedings of ISDMISC-2011, Sikkim, pp. 475-478, 2011.

2010

  1. T. R. Lenka and A. K. Panda, “Microwave Characteristics Study of AlGaN/GaN-based Heterojunction Field Effect Transistor,” Proceedings of ICMARS-2010, pp.53-54, 14-17, Dec 2010, Jodhpur.
  2. T. R. Lenka and A. K. Panda, “Microwave Characteristics of AlxGa1-xN/GaN-based HEMT using Self-Consistent Subband Calculations,” Proceedings of International Symposium on Microwaves (ISM-2010), Bangalore, pp. 139-142, 11-14, Dec 2010.
  3. T. R. Lenka, A. K. Panda, “Self-consistent Subband Calculations of AlxGa1-xN/(AlN)/GaN-based High Electron Mobility Transistor,” 2010 International Conference on Micro Nano Devices, Structure and Computing Systems (MNDSCS 2010), 6-7 Nov 2010, Singapore. [Scopus]

2009

  1. T. R. Lenka, and A. K. Panda, “Microwave Characteristics of AlxGa1-xN/InxGa1-xN/GaN-based HEMT using Propagation Delay Model,” 4th IEEE International Conference on Computers and Devices for Communication (CODEC 2009), pp.1-4, 14-16, Dec 2009. (IEEE Xplore) [Scopus]
  2. T. R. Lenka, and A. K. Panda, “Microwave Characteristics of AlxGa1-xAs/InxGa1-xAs/GaAs – Based Pseudomorphic HEMT to use in High Frequency VLSI Circuits,” Proceedings of International Symposium on Microwave and Optical Technology (ISMOT-2009), pp.715-718, 16-19, Dec 2009, New Delhi.
  3. T. R. Lenka, and A. K. Panda, “Heterointerface Polarization Effect and DC Characteristics Study of AlxGa1-x N/InxGa1-xN/GaN Based High Electron Mobility Transistor,” Proceedings of International Workshop on the Physics of Semiconductor Devices, pp.117-118, 15-19, Dec 2009, New Delhi.

2008

  1. T. R. Lenka, and A. K. Panda, “Characteristics Study of Optimized Heterostructure based Pseudomorphic HEMT/MODFET to use in High Frequency VLSI Circuits,” Research Scholar Forum, VLSI Design and Test Symposium (VDAT-2008), July 23-26, 2008, Bangalore.

 

BOOK CHAPTERS:

  1. Rajan Singh, Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen, “3D Simulation Study of Laterally Gated AlN/β-Ga2O3 HEMT Technology for RF and High-Power Nanoelectronics,” HEMT Technology and Applications, Springer Tracts in Electrical and Electronics Engineering, https://doi.org/10.1007/978-981-19-2165-0_7 .
  2. Purnachandra Rao, Rajan Singh, and Trupti Ranjan Lenka, “Operation Principle of AlGaN/GaN HEMT,” HEMT Technology and Applications, Springer Tracts in Electrical and Electronics Engineering, https://doi.org/10.1007/978-981-19-2165-0_8 .
  3. Raghunandan Swain and Trupti Ranjan Lenka, “Enhancement-Mode MOSHEMT,” HEMT Technology and Applications, Springer Tracts in Electrical and Electronics Engineering, https://doi.org/10.1007/978-981-19-2165-0_10.
  4. Purnachandra Rao, Rajan Singh, and Trupti Ranjan Lenka, “Performance Analysis of AlGaN/GaN HEMT for RF and Microwave Nanoelectronics Applications,” HEMT Technology and Applications, Springer Tracts in Electrical and Electronics Engineering, https://doi.org/10.1007/978-981-19-2165-0_11.
  5. Rajan Singh, Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen, “Evolution and Present State-of-Art Gallium Oxide HEMTs–The Key Takeaways,” HEMT Technology and Applications, Springer Tracts in Electrical and Electronics Engineering, https://doi.org/10.1007/978-981-19-2165-0_14.
  6. Yogesh Kumar Verma, Varun Mishra, Rajan Singh, Trupti Ranjan Lenka, and Santosh Kumar Gupta, “Linearity Analysis of AlN/β-Ga2O3 HEMT for RFIC Design,” HEMT Technology and Applications, Springer Tracts in Electrical and Electronics Engineering, https://doi.org/10.1007/978-981-19-2165-0_15.
  7. Deepak Kumar Panda and Trupti Ranjan Lenka, “HEMT for Biosensing Applications,” HEMT Technology and Applications, Springer Tracts in Electrical and Electronics Engineering, https://doi.org/10.1007/978-981-19-2165-0_16.
  8. Ravi Teja Velpula, Barsha Jain, Samadrita Das, Trupti Ranjan Lenka and Hieu Pham Trung Nguyen, “Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron-Blocking Layer Free Approach,” Springer LNEE Series: Micro and Nanoelectronics Devices, Circuits and Systems – Select Proceedings of MNDCS 2022. [Scopus]
  9. Samadrita Das, R. Lenka, F. A. Talukdar, and R. T. Velpula, H. P. T. Nguyen, “Carrier Transport and Radiative Recombination Rate Enhancement in GaN/AlGaN Multiple Quantum Well UV-LED Using Band Engineering for Light Technology,” Springer LNEE Series: Micro and Nanoelectronics Devices, Circuits and Systems – Select Proceedings of MNDCS 2022. [Scopus]
  10. Vallisree, T. R. Lenka and Mrudula J., “Modeling and Optimization analysis of HIT-CBTSSe tandem solar cell,” Springer LNEE Series: Micro and Nanoelectronics Devices, Circuits and Systems – Select Proceedings of MNDCS 2022. [Scopus]
  11. Ashutosh Srivastava, R. Lenka, Jesuraj Anthoniappen and S. K. Tripathy, “Investigation on thermodynamic properties of novel Ag2SrSn(S/Se)4 quaternary chalcogenide for solar cell applications: A density functional theory study,” Springer LNEE Series: Micro and Nanoelectronics Devices, Circuits and Systems – Select Proceedings of MNDCS 2022. [Scopus]
  12. S. Vallisree, and T. R. Lenka, “EQE Analysis of HIT-CZTS Tandem Solar Cell towards Minimizing Current Losses,” Springer LNEE Series: Micro and Nanoelectronics Devices, Circuits and Systems – Select Proceedings of MNDCS 2021. Vol. 781, DOI: 10.1007/978-981-16-3767-4_21. [Scopus]
  13. A. Srivastava, T. R. Lenka, and S. K. Tripathy, “SCAPS-1D simulations for comparative study of alternative absorber materials Cu2XSnS4 (X= Fe, Mg, Mn, Ni, Sr) in CZTS based Solar cells,” Springer LNEE Series: Micro and Nanoelectronics Devices, Circuits and Systems – Select Proceedings of MNDCS 2021. Vol. 781, DOI: 10.1007/978-981-16-3767-4_31. [Scopus]
  14. M. Krishnasamy, J. R. Shinde, H. P. Mohammad, G. Amarnath, and T. R. Lenka, “Design and Analysis of FEM Novel X-Shaped Broadband Linear Piezoelectric Energy Harvester,” Springer LNEE Series: Micro and Nanoelectronics Devices, Circuits and Systems – Select Proceedings of MNDCS 2021, Vol. 781. DOI: 10.1007/978-981-16-3767-4_39. [Scopus]S. R. Routray, T. R. Lenka, “III-Nitride Nanowires: Future Prospective for Photovoltaic Applications,” Nanowires-Recent Progress, IntechOpen, ISBN 978-1-83962-392-9, 2021.
  15. R. Routray, T. R. Lenka, “III-Nitride Nanowires: Future Prospective for Photovoltaic Applications,” Nanowires-Recent Progress, IntechOpen, ISBN 978-1-83962-392-9, 2021.
  16. R. Singh, T. R. Lenka, D. K. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen, “Ga2O3 based Heterostructure FETs (HFETs) for Microwave and Millimeter-wave Applications,” Emerging Trends in Terahertz Engineering and System Technologies: Devices, Materials, Imaging, Data Acquisition and Processing, Springer Nature, 2021, DOI:10.1007/978-981-15-9766-4_11.
  17. R. Singh, T. R. Lenka, D. K. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen, “RF Performance of Ultra-wide bandgap HEMTs” Emerging Trends in Terahertz Solid-State Physics and Devices, Springer Nature, pp. 49-63, Mar 2020 DOI:10.1007/978-981-15-3235-1
  18. P. Das, T. R. Lenka, S. S. Mahato and A. K. Panda, “Chapter 4: Source/Drain, Gate and Channel Engineering in HEMTs,” Handbook for III-V High Electron Mobility Transistor Technologies, CRC Press, 2019. Chapter-4, pp.81-95, Hardback: 9781138625273, pub: 2019-05-31.
  19. P. Das, T. R. Lenka, S. S. Mahato and A. K. Panda, “Chapter 8: Polarization Effects in AlGaN/GaN HEMTs,” Handbook for III-V High Electron Mobility Transistor Technologies, CRC Press, 2019, Chapter-8, pp. 211-225. Hardback: 9781138625273, pub: 2019-05-31.
  20. D. K. Panda, G. Amarnath, T. R. Lenka, “Chapter 15: Metal Oxide Semiconductor High Electron Mobility Transistors,” Handbook for III-V High Electron Mobility Transistor Technologies, CRC Press, 2019, Chapter 15, pp.391-400. Hardback: 9781138625273, pub: 2019-05-31.
  21. D. K. Panda and T. R. Lenka, “Device Optimization of E-Mode N-Polar GaN MOS-HEMT for Low Noise RF & Microwave Applications,” The Physics of Semiconductor Devices, Springer Proceedings in Physics, Vol 215, pp.171-176, 2019. DOI: 10.1007/978-3-319-97604-4_27. Book ISBN: 978-3-319-97603-7, Springer Nature Switzerland.
  22. R. Paswan, D. K. Panda and T. R. Lenka, “Dielectric Modulated AlGaAs/GaAs HEMT for Label-Free Detection of Biomolecules,” The Physics of Semiconductor Devices, Springer Proceedings in Physics, Vol. 215, pp 709-715, 2019. DOI: 10.1007/978-3-319-97604-4_110. Book ISBN: 978-3-319-97603-7, Springer Nature Switzerland.
  23. T. R. Lenka, G. N. Dash, A. K. Panda, “Small-Signal RF and Microwave Characteristics of Sub-Micron AlGaN/GaN HEMT,” Physics of Semiconductor Devices, Environmental Science and Engineering (Springer), pp.153-156, 2014. DOI: 10.1007/978-3-319-03002-9_15.
  24. D. Pandey, A. Bhattacharjee, T. R. Lenka, “Study on Temperature Dependence Scattering Mechanisms and Mobility Effects in GaN and GaAs HEMTs,” Physics of Semiconductor Devices, Environmental Science and Engineering (Springer), pp.67-70, 2014. DOI: 10.1007/978-3-319-03002-9_15.

BOOKS EDITED:

  1. Trupti Ranjan Lenka, Durga Misra, and Lan FU (eds.), “Micro and Nanoelectronics Devices, Circuits and Systems: Select Proceedings of MNDCS 2022,” Springer Nature, Singapore, 2022, ISBN 978-981-19-2307-4.
  2. Trupti Ranjan Lenka and Hieu Pham Trung Nguyen (eds.), “HEMT Technology and Applications,” Springer Tracts in Electrical and Electronics Engineering, Springer Nature, Singapore, 2022, ISBN: 978-981-19-2164-3. DOI: https://doi.org/1007/978-981-19-2165-0_11.
  3. Mohammed El. Ghzaoui, Sudipta Das, Trupti Ranjan Lenka, and Arindam Biswas (eds.), “Terahertz Wireless Communication Components and System Technologies,” Springer Nature, Singapore, 2022, ISBN: 978-981-16-9181-2. DOI: https://doi.org/10.1007/978-981-16-9182-9.
  4. Trupti Ranjan Lenka, Durga Misra, and Arindam Biswas (eds.), “Micro and Nanoelectronics Devices, Circuits and Systems: Select Proceedings of MNDCS 2021,” Springer Nature, Singapore, 2021. DOI: 10.1007/978-981-16-3767-4.

EDITORIAL BOARD MEMBER:

  1. Review Editor of the Editorial Board of Nanoelectronics (specialty section of Frontiers in Nanotechnology), 2021.ISSN: 2673-3013.
  2. Associate Editor, International Journal of Reconfigurable and Embedded Systems (IJRES), 2020.
  3. Associate Editorial Board Member, Micro and Nanosystems, Bentham Science, 2020. ISSN: 1876-4029.
  4. Academic Editor, Shock and Vibration, Hindawi 2020. ISSN: 1070-9622.

PROFESSIONAL MEMBERSHIPS:

  1. Professional Engineers Certification (PEC) of Electronics & Telecommunication Engineering Discipline by The Institution of Engineers (India) (IEI) (PE No.7005321), 2022.
  2. Member, SPIE (SPIE ID#: 4320489), 2021.
  3. Member, OSA, Member Number: 1710354, Aug 2021.
  4. Life Member, Indian Society for Technical Education (LMISTE), 2021.
  5. Fellow, The Institution of Electronics and Telecommunication Engineers (F-IETE) (F-502022), Dec 17, 2020.
  6. Fellow, The Institution of Engineers (India) (FIE) F-1532817, Sept 16, 2020.
  7. Chartered Engineer (CEng) by The Institution of Engineers (India), Sept 16, 2020.
  8. Member, IET, UK (Membership # 1100923405), 2020.
  9. Member, IOP, UK (Membership # 80085641), 2018.
  10. Senior Member, IEEE (EDS, SSCS, CAS, Photonics, NTC) (Membership # 90455510), 2010.
  11. Member, Semiconductor Society of India (SSI), (Membership # 201011628), 2010.
  12. Life Member, Odisha Bigyan Academy (OBA), (Membership # 393/549), 2009.
  13. Life Member, Odisha Physical Society (OPS), (Membership # 153), 2009.
  14. Member, ACEEE (Association of Computer Electronics and Electrical Engineers) (Membership No.7000140)
  15. Member, International Association of Computer Science and Information Technology (IACSIT), (Membership No. 80339155)
  16. Senior Member, Universal Association of Computer and Electronics Engineers, The IRED. (SNM101000417)

AWARDS & RECOGNITIONS:

  1. Professional Engineers Certification (PEC) of Electronics & Telecommunication Engineering Discipline by The Institution of Engineers (India) (IEI), 2022.
  2. DST-SERB MATRICS Project Grant of 6.6 Lakhs, 14th Jan 2022.
  3. Outstanding Volunteer Award 2021 by IEEE Kolkata Section.
  4. 2021 IEEE Electron Devices Society (EDS) Student Branch Chapter of the Year Award: National Institute of Tech Silchar, Assam, India. (Certificate and 500 USD)
  5. Distinguished Researcher in Nanoelectronics Award 2021 by Venus International Science and Technology Awards (VISTA 2021) on 6th Nov 2021, Chennai, India.
  6. Fellow of The Institution of Electronics and Telecommunication Engineers (IETE)
  7. Fellow of The Institution of Engineers (India) (IEI)
  8. Chartered Engineer by The Institution of Engineers (India).
  9. Founding Chair, IEEE Kolkata Section Nanotechnology Council Chapter, 2020.
  10. CSIR-EMR-II Project Grant of 21.5 Lakhs, 2020.
  11. Distinguished Faculty Award 2019 by NIT Silchar on 2nd Nov 2019.
  12. DST-SERB sponsored the ASEAN-India Collaborative R&D project under ASEAN-India S&T Development Fund (AISTDF), 10th Sept 2019 (2 Years, 31.94 Lakhs).
  13. Certificate of Appreciation Awarded by Chair, IEEE ED/CAS Chapter, NJIT, USA, 2019.
  14. Visiting Researcher position at New Jersey Institute of Technology (NJIT), Newark, USA from June-Aug 2019.
  15. DST-SERB partial grant-in-aid to conduct “National Workshop on Modeling of Novel Nanoelectronics Devices and Circuits for ULSI Technology”, 26-30 Apr 2019. (1 Lakh)
  16. Visiting Researcher position at Solar Energy Research Institute of Singapore (SERIS), National University of Singapore (NUS), Singapore during June-Sep 2018.
  17. Visvesvaraya Young Faculty Research Fellowship Award by Ministry of Electronics and Information Technology (MeitY), GOI, 2018-2020. (2 Yrs 9 Months) (16.6 Lakhs)
  18. IEEE-EDS Fellowship to attend IEEE-EDS Region-10 Mid-Year Governance Meeting Series at Kochi, India, 20-21 May 2017.
  19. Fellowship to attend 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems at Kolkata from 04-08, Jan 2016.
  20. Senior Member IEEE, 2016.
  21. IEEE-EDS Fellowship to attend IEEE-EDS Region-10 Mid-Year Governance Meeting Series at Singapore, 30 May–01 June 2015.
  22. Letter of Appreciation from, Director General, Centre for Development of Advanced Computing (C-DAC), Pune. 2014.
  23. Letter of Appreciation from Sr. Director, Centre for Development of Advanced Computing (C-DAC), Pune, 2014.
  24. Letter of Appreciation from Intel Technology India Ltd., 2014.
  25. Letter of Appreciation from Director, NIT Silchar, 2014.
  26. DST-SERB Travel Grant to visit Italy for attending IEEE NMDC 2014 at Aci-Castello, Catania, Italy, 12-15 Oct 2014.
  27. Founding Chapter Advisor, IEEE ED NIT Silchar Student Branch Chapter since 2013.
  28. Fellowship to attend International Conference on VLSI Design and Embedded System Design 2013 at Pune.
  29. International Travel Grant from CICS, Chennai to attend International Conference on SSDMS 2012 at Macau, China from 01-02 Apr 2012.
  30. Fellowship to attend International Conference on VLSI Design and Embedded System Design 2012 at HICC, Hyderabad.
  31. Fellowship to attend International Conference on VLSI Design and Embedded System Design 2011 at IIT, Chennai.
  32. DST Young Scientist Grant for International Travel Support (ITS) to attend International Conference on MNDSCS 2010 at Singapore from 06-07 Nov, 2010.
  33. CSIR Foreign Partial Financial Assistance in 2010.
  34. Fellowship to attend International Conference on VLSI Design and Embedded System Design 2010 at Bangalore.
  35. Fellowship to attend International Conference on VLSI Design and Embedded System Design 2009 at New Delhi.
  36. Fellowship to attend VLSI Design and Test Symposium 2008 at Bangalore.

ADMINISTRATIVE RESPONSIBILITIES:

  1. Chairman/Member of Doctoral Committee of PhD Scholars.
  2. Secretary of Doctoral PhD Monitoring Committee (DPMC) from June 2020-Feb 2022.
  3. Convener, Institute GeM Purchase Committee since Sept 2019 till date.
  4. Associate Warden: Hostel-8, National Institute of Technology Silchar e.f 01 Jan 2021 for 2 years.
  5. Associate Warden: Hostel-1, National Institute of Technology Silchar from March 2015 to Sept 2017.
  6. Coordinator: Peer Review of National Institute of Technology Silchar from 21-24 Feb 2016.
  7. Nodal Officer: Establishment of Research Laboratories using C-DAC Lab Kits in North East Region Educational Institutes by C-DAC, Bangalore.
  8. Nodal Officer: C-DAC Activities at NIT Silchar since 2013.
  9. Coordinator: NITS Supercomputing Centre-The Centre of Excellence in High-Performance Computing is the first of its kind state-of-the-art Supercomputing Centre in North East, built with the x86_64-bit latest Intel Ivy Bridge processing and Accelerators (Intel Xeon Phi and NVIDIA Kepler Co-processing) technologies with a compute power of 15 Tera Flops, established in collaboration with C-DAC, Pune.

PH.D. SCHOLARS GUIDED: 12

  1. Ashutosh Srivastava: Novel Thin Film Solar Cells from Material to Device, Mar 2022. (Co-Guide)
  2. Rajan Singh: Modeling and Simulation of Ga2O3-based HEMT for RF and High-Power Electronics Applications, awarded on 28th Mar 2022. (Sole Guide)
  3. Sivathanu Vallisree: Design and Analysis of Silicon-CZTS Tandem Solar Cells for Efficiency Enhancement, IIT (ISM), Dhanbad, awarded on 16th Aug 2019. (Co-Guide)
  4. Amarnath Gaini: Modeling and Simulation of AlInN/AlN/GaN MOS-HEMT for Millimeter-Wave Electronic Applications, Awarded on 5th Feb 2019. (Sole Guide)
  5. M. Krishnasamy: Modeling and Simulation of Distributed Parameters based Segmented Piezoelectric Energy Harvester for Wideband Low-Frequency Vibrations,” Awarded on 24th Jan 2019. (Sole Guide)
  6. Deepak Kumar Panda: Compact Model Development of Low Noise E-mode GaN MOS-HEMT for RF Front-end Transceiver Circuit Design, Awarded on 6th Nov, 2018. (Sole Guide)
  7. Soumya Ranjan Routray: Modeling and Simulation of GaN/InGaN/GaN-based Core/Shell/Shell Nanowire Solar Cell for Next Generation Photovoltaics Technology, under “Visvesvaraya Ph.D. Scheme for Electronics and IT,” Awarded on 29th Sept, 2018. (Sole Guide)
  8. Achinta Baidya: Circuit Performance Analysis of Double Gate Junctionless Transistor with High-k Dielectrics and Metal Gates, Awarded on 28th Feb 2018. (Co-Guide), NIT Silchar.
  9. Biraj Shougaijam: Growth and Characterization of TiO2 Nanowires and Metal Nanoparticle Assisted TiO2 Nanowires for Opto-Nanoelectronic Applications, Awarded on 2nd Jan 2018. (Sole Guide), NIT Silchar.
  10. Richik Kashyap: Distributed Parameter Modeling and Autonomous Charge Extraction of d31 and d33 Mode Piezoelectric Energy Harvesters, Awarded on 15th Dec 2016. (Co-Guide), NIT Silchar.
  11. Kanjalochan Jena: Modeling and Simulation of AlInN/AlN/GaN MOSHEMT for High Power and High-Frequency Electronics, Awarded on 14th Nov 2016. (Sole Guide), NIT Silchar.
  12. Raghunandan Swain: Modeling and Simulation of GaN-based MOSHEMTs for Power Electronic Applications, Awarded on 03rd Nov 2016. (Sole Guide), NIT Silchar.

PH.D. SCHOLARS GUIDING: 03

  1. Samadrita Das: III-Nitride Nanowire LED for Light Technology, July 2020. (Guide)
  2. Rabin Paul: Perovskite/CZTS Tandem Solar Cell Design, July 2020. (Guide)
  3. Purnachandra Rao: GaN/Ga2O3 Nano-HEMT Modeling, July 2020 (Sole Guide)

M.TECH. THESIS GUIDED: 23

  1. Madhukar Saini, RF Microelectronics using GaN HEMT, VVDN Technologies, 2020-2022.
  2. Sushma Kumari, STMicroelectronics, 2020-2022.
  3. Naga Teja, Improved ground path Power-On Reset circuit with Brownout detector in 5nm FinFET Technology, May 2021.
  4. Sadique Mohammad Iqbal, Design of a 12-bit SAR ADC in 16nm Technology, May 2021.
  5. Umakanta Padhan, Analog Validation, Characterization, and Analysis of I/O Pad in Test Vehicle, Internship at NXP, Noida, 2018-2020.
  6. Aruna Soibam Chanu, Numerical Simulation study of high-efficiency lead-free Perovskite Solar Cell, 2017-2019.
  7. Anuj Kumar: Design and Comparative Analysis of Enhancement Mode Double Gate Double Channel 0.5 µm AlGaN/GaN MOS-HEMT Structure, 2016-2018.
  8. Ranjit Kumar Paswan, Design and Simulation of AlGaAs/GaAs HEMT as a Biosensor, 15th May 2017.
  9. Usham Siddhartha, DC and RF Characteristics Study of SiGe HBT with different base contact Configurations, 20th July 2015.
  10. Srinivasarao, Modelling and Analysis of Fringing Frequency Effect on Microwave Characteristics of InAlN/AlN/GaN HEMT, 6th May 2015.
  11. Juktajiban Panda, Modelling and Simulation of 2DEG Density and Threshold Voltage of GaN-based MOSHEMT, 6th May 2015.
  12. Abhishek Bhattacharjee, DC and Microwave Characteristics Study of InAlN/GaN HEMT, 5th May 2014.
  13. Devashish Pandey, Modelling and Characteristics Study of InAlN/AlN/GaN-based MOSHEMT for Microwave Frequency Operation, 5th May 2014.
  14. Dibyadrasta Sahoo, Leakage Current Analysis and RF Characteristics Study of Junctionless Transistor, 5th May 2014.
  15. Vineeth Krishnan, Characteristics Study of 3D Junctionless Transistor, NIT Silchar, 3rd May 2013.
  16. Bijay Krushna Parida: Design and Implementation of 16-bit Reed Solomon Encoder for Secure Wireless Communication using Cadence Tool; 2010-2012.
  17. Amiya Ranjan Das: Design and Implementation of 32-bit Reed Solomon Encoder using Cadence Tool; 2010-2012.
  18. Rakesh Kumar Patro: A High-Performance Architecture Design of PLC Dedicated Processor using Cadence; 2010-2012.
  19. Prashanta Kumar Dehury: Advance Error Correction Code based Online Error Detection and Correction Scheme for SRAM, 2010-2012.
  20. Rajesh Misra: Characteristics Study of GaAs Heterostructure Based High Electron Mobility Transistor Using Sentaurus TCAD; 2007-2009.
  21. Rajesh Kumar Behera: Design & Simulation of CMOS Circuits using Sentaurus TCAD Tool; 2007-2009.
  22. Mangesh Nagrale: Design of 10-Bit SAR ADC using 0.35μ Technology for RSSI; 2006-2008.
  23. Archana Mishra: Design of Op-Amp using TL Analysis; 2006-2008.

B.TECH. PROJECTS:

  1. Human Activity Recognition using Smart Phone by Monu Kumar Mahato, Saumya Garg, Jahnu Sarmah, Pratulya Shashank, Batch: 2017-2021.
  2. Design and Simulation of High-Efficiency Inorganic Perovskite Solar Cell for Energy Harvesting by Bidisha Das and Yash Agarwal, Batch: 2016-2020.
  3. Design and Simulation of III-Nitride-based LED using Silvaco TCAD by Udipta Sarma Bharadwaj and Tamoghna Das, Batch: 2016-2020.
  4. Investigation of Tunneling Effect in Perovskite/Silicon Tandem Solar Cell by Akshayarka Alammyan Deka, Amlan Jyoti Dutta, Batch: 2015-2019.
  5. Identification of Cancer Tumor Using Genetic Mutation by G. Sandeep Nayak, Shivam Tiwari, Batch: 2015-2019.
  6. Design and Simulation of High-Efficiency Perovskite Solar Cell by Kishan Dewri and Divyanshu Verma, Batch 2015-2019.
  7. Simulation of E-mode Ferroelectric Gate AlGaN/GaN HEMT by Gate Recessed Technique by Bhargab Kalita & Gunjan Das, Batch: 2014-2018.
  8. RF Front-end module design using GaN HEMT of 0.15um and 0.5um Technology, by Samrat Deb & Sushant Anshu, Batch: 2014-2018.
  9. Effect of Intrinsic layer on the performance of InGaP/GaAs Dual Junction Solar Cell by J. V. Nikhil Kumar & R. Ajay Kumar, Batch: 2014-2018.
  10. High-Speed Efficient Karatsuba-Pipelined Multiplier for Encryption and Decryption, Batch: 2013-2017.
  11. Implementation of AES Cipher Lightweight Cryptography for Smart Phones, Batch: 2013-2017.
  12. A Numerical Simulation Study of High-Efficiency Multi-Junction Solar Cell, Batch: 2012-2016.
  13. Design and Simulation of GaN HEMT Power Amplifier using ADS, Batch: 2011-2015
  14. A New Rail to Rail OpAmp Architecture with Constant 2Gm Input Stage, Batch: 2009-2013.
  15. Design and Analysis of Comparator and CBSC Circuit by Conventional and gm/Id Technique, Batch: 2009-2013.

PROFESSIONAL COURSES ATTENDED:

  1. MHRD-UGC Approved One Week Online Programme on “Managerial Skills for Academicians and Administrators in Higher Education (TLC-15)” by NITTTR Bhopal, June 21-25, 2021.

WORKSHOPS ORGANIZED:

  1. 2021 IEEE Electron Devices Society (EDS) Summer School during 01-05 Sept 2021.
  2. IEEE Sponsored International Workshop on Optimization and Intelligence in Electronics Engineering Applications (IEEE OIEEA-2021), 26-30 July 2021.
  3. DST-SERB and TEQIP-III Sponsored National Workshop on Modeling of Novel Nanoelectronics Devices and Circuits for ULSI Technology, 26 – 30 April 2019.
  4. Two-week ISTE STTP on “CMOS, Mixed-signal and Radio Frequency VLSI Design” during 30 Jan – 04 Feb 2017.
  5. One-week Self-Financed Short-Term Training Program on “Microelectronics and VLSI Design” during 21-26 March 2016.
  6. Workshop on “MEMS” on 7 Feb 2015.
  7. Workshop on “MEMS and SENSORS” during 11-12 Sept 2013.
  8. Seminar on “Interdisciplinary Research on Biomedical Engineering” on 26 Aug 2013.

CONFERENCES/IEEE-EDS EVENTS ORGANIZED:

  1. General Co-Chair, 2nd Springer International Conference on Micro/Nanoelectronics Devices, Circuits, and Systems (MNDCS-2022), 29-31 Jan 2022
  2. IEEE EDS Distinguished Lecture by Prof. Joachim N. Burghartz, IMS CHIPS, Stuttgart, Germany, 22 July 2021.
  3. IEEE EDS Distinguished Lecture by Prof. Elena Gnani, University of Bologna, Italy, 12 July 2021.
  4. IEEE EDS Distinguished Lecture by Prof. Patrick Fay, University of Nortedem, USA, 30 June 2021.
  5. IEEE EDS Distinguished Lecture by Prof. Jesus A. del Alamo, MIT, USA, 29 June 2021.
  6. IEEE EDS Distinghushed Talk by Prof. Ajit Panda, ECoE, Bhubaneswar, 22 May 2021.
  7. Organizing and TPC Chair, 2021 Springer International Conference on Micro/Nanoelectronics Devices, Circuits, and Systems (MNDCS-2021), 29-31 Jan 2021.
  8. IEEE EDS Mini-Colloquium (MQ) on “Nanoelectronics and Nanotechnology” on 31 Oct 2020.
  9. IEEE EDS Distinghushed Talk by Prof. Durga Misra, NJIT, USA, 31 July 2020.
  10. IEEE EDS Distinghushed Talk by Prof. Ajit Panda, ECoE, Bhubaneswar, 27 June 2020.
  11. IEEE-EDS sponsored Mini-Colloquium (MQ) on “Recent Trends in Microelectronics and VLSI Design” on 03rd Nov 2018.
  12. IEEE-EDS Distinguished Lecture on “Compact Modeling of GaN HEMTs for High Frequency and High-Power Application” of 08 Nov 2017 by Prof. Y. S Chauhan, IIT Kanpur.
  13. IEEE-EDS Distinguished Lecture on “VLSI – The Soul of Engineering Evolution in Electronics” on 15 Sept. 2015 by Dr. M. K. Radhakrishnan.
  14. National Symposium on “High-Performance Computing” during 04-09 April 2014.
  15. IEEE-EDS Distinguished Lecturer (DL) Talk on 10 Sept 2013 by Prof. Ramgopal Rao, IIT Bombay.

CHAIRING OF TECHNICAL SESSIONS:

  1. 2nd International Conference on Artificial Intelligence and Signal Processing (AISP’22), 12–14 Feb 2022 at VIT-AP University, Amaravati, India.
  1. 4th International Conference on Devices for Integrated Circuits (DevIC 2021), 19-20 May 2021 at Kalyani GEC, WB, India.
  2. 28th National Conference on “Condensed Matter Days 2020” (CMDAYS 2020), 11-13 Dec 2020 at NIT Silchar.
  3. IEEE Nanotechnology Materials and Devices Conference 2019 (IEEE NMDC 2019), 27-30 Oct 2019, Stockholm, Sweden.
  4. 6th Students Conference on Engineering and Systems (SCES 2020), July 10-12, 2020, MN-NIT Allahabad, India.
  5. International Conference on Recent Trends in Electronics and Computer Science (ICRTECS 2019), 18-19 Mar 2019, at NIT Silchar.
  6. IEEE International Conference on Electron Devices and Solid-State Circuits (IEEE EDSSC 2015), 1-4 June 2015, Singapore.

CONFERENCES/RESEARCH VISITS AT ABROAD:

  1. 2019 IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2019), 27-30 Oct 2019, Sweden.
  2. Visiting Researcher, NJIT, USA, 10 June – 10 Aug, 2019.
  3. Visiting Researcher, NUS, Singapore, 15 June -10 Sept 2018.
  4. 2018 5th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2018), 19-21 Mar 2018, Spain.
  5. 2017 IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2017), 2-4 OCT 2017, Singapore.
  6. 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2015), 1-4 June 2015, Singapore.
  7. 2014 IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2014), 12-15 Oct 2014, Aci-Castello, Italy.
  8. 2013 IEEE International Conference on Electron Devices and Solid-State Circuits (IEEE EDSSC 2013), 3-5 June 2013, Hong Kong.
  9. 2012 International Conference on Solid-State Devices and Materials Science (SSDMS 2012), 1-2 Apr 2012, Macau.
  10. 2010 International Conference on Micro Nano Devices, Structure and Computing Systems (MNDSCS 2010), 6-7 Nov 2010, Singapore.

INTERNATIONAL COLLABORATORS:

  1. Prof. Giovanni Crupi, University of Messina, Messina, Italy.
  2. Dr. Nour El I Boukortt, Kuwait College of Science and Technology, Doha, Kuwait.
  3. Prof. Hieu P. T. Nguyen, New Jersey Institute of Technology, Newark, USA.
  4. Prof. Armin G. Aberle, and Dr. Lin Fen Serena, Solar energy Research Institute of Singapore (SERIS), National University of Singapore (NUS), Singapore.
  5. Prof. Lei Zuo, Energy Harvesting and Mechatronics Research Lab, Virginia Tech, VA, USA.
  6. Prof. Y. Yang, Nanyang Technical University (NTU), Singapore.
  7. Prof. Edward Wasige, High-Frequency Electronics, James Watt School of Engineering, University of Glasgow, UK.

COUNTRY VISITED:

  • Sweden, USA, Singapore (4 times), Spain, Italy, Hong Kong, Thailand (2 times), and Macau.