Dr. ROBIN KHOSLA

5. Roby - Asst. Prof

Assistant Professor

National Institute of Technology (NIT) Silchar

Department of Electronics and Communications Engineering

Silchar, Assam, 788010, India

Email: robin@ece.nits.ac.in

Phone: +91-9816109945


Date of Joining: 04/06/2018

Academic Experience: 5+ years

Personal Webpage: https://sites.google.com/view/robinkhosla


ACADEMIC QUALIFICATIONS

  • PDF: University of Stuttgart, Stuttgart, Germany, 2021
  • Ph.D.: Indian Institute of Technology (IIT) – Mandi, Mandi, Himachal Pradesh, India, 2017
  • M.Tech.: Punjab Technical University, (C-DAC Mohali), Punjab, India, 2013
  • B.Tech.: Punjab Technical University, Punjab, India, 2011

EXPERIENCE

  • Oct 2021 – Present:      Assistant Professor, National Institute of Technology (NIT), Silchar, Assam, 788010, India
  • Aug 2019 – Sep 2021:  Alexander von Humboldt Post Doc Fellow, University of Stuttgart (TU), Stuttgart, 70569, Germany
  • Jun 2018 – Jul 2019:    Assistant Professor, National Institute of Technology (NIT), Silchar, Assam, 788010, India
  • Sep 2017 – Jun 2018:   Research Associate, Indian Institute of Technology (IIT) Mandi, Mandi, Himachal Pradesh, 175005, India
  • Aug 2015 – Sep 2017:   Senior Research Fellow, Indian Institute of Technology (IIT) – Mandi, Himachal Pradesh, 175005, India
  • Jul 2013 – Jul 2015:     Junior Research Fellow, Indian Institute of Technology (IIT) – Mandi, Himachal Pradesh, 175005, India
  • May 2012 – Jul 2012:   Embedded Trainer, IT Research & Development Center (TCIL-IT), Phase-10, Mohali, Punjab, 140001, India

 


RESEARCH INTERESTS AND SPECIALIZATION

  • Nanoelectronics
  • Micro/Nanofabrication and characterization
  • Semiconductor Materials and Devices
  • High-k dielectrics
  • CMOS logic Devices
  • Non-Volatile Memories
  • Sensors and Actuators
  • MEMS
  • Embedded Systems
  • FPGA based systems

BIOGRAPHICAL SKETCH

Dr. Robin Khosla was born in Punjab, India, in 1989. He received the B.Tech. degree in Electronics and Communication Engineering, the M.Tech. degree in VLSI Design from Punjab Technical University, Punjab, in 2011, 2013, respectively, and Ph.D. degree from the School of Computing and Electrical Engineering, Indian Institute of Technology (IIT), Mandi, Himachal Pradesh, India in 2017. He was awarded Alexander von Humboldt Research Fellowship for Postdoctoral Researchers, Germany in 2018. He served as an Assistant Professor at the Department of Electronics and Communication Engineering, National Institute of Technology (NIT), Silchar, Assam, 788010, India from June 2018 to July 2019. He worked as Alexander von Humboldt (AvH) Postdoc Fellow at the Institute of Semiconductor Engineering, University of Stuttgart, Germany, from Aug 2019 to Sept 2021.

Robin Khosla currently works as Assistant Professor, in the Department of Electronics and Communication Engineering, National Institute of Technology (NIT), Silchar from Oct 2021 onwards.

He does research in Nanoelectronics, Micro/Nanofabrication, Semiconductor Materials and Devices, Device structures, MOS structures, High-k dielectrics, CMOS Logic, Non-Volatile Memories, charge trap memories, Ferroelectrics, Ferroelectric memories (FeRAM), thin films, physical vapor deposition, chemical vapor deposition, atomic layer deposition, Nanoscopic investigations of high-k oxides using AFM based techniques, material, and electrical characteristics. Embedded systems and Implementation on FPGA using the hardware description language.

His current project is ‘Group-IV based logic and memory devices’, ‘Non-volatile memories’, and ‘Nanoscopic investigations of high-k oxides using AFM based techniques.


PUBLICATIONS (JOURNALS/CONFERENCES)


INTERNATIONAL JOURNALS (SCI)

21. S. Sharma, R. Khosla, S. Das, H. Shrimali and S. K. Sharma, “Two-Dimensional Van der waals Hafnium Disulfide and Zirconium Oxide based Micro-IDE Transistors,” IEEE Transactions on Electron Devices, 2022 (accepted)

20. S. Choudhary, D. Schwarz, H. S. Funk, D. Weißhaupt, R. Khosla, S. K. Sharma, and J. Schulze, A Steep Slope MBE Grown thin p-Ge Channel FETs on Bulk Ge-on-Si using HZO internal Voltage Amplification, IEEE Transactions on Electron Devicesvol. 69, pp.2725, 2022. for details view doi: 10.1109/TED.2022.3161857

19. S. Rathaur, R. Khosla and S. K. Sharma, Metal (Pt) / Ferroelectric (SrBi2Ta2O9) / Insulator (La2O3) / Semiconductor (Si), MFIS structures for non-volatile memory applications, Appl. Phys. Lett., vol. 119, pp. 063505, 2021. for details view doi: 10.1063/5.0055792

18. R. Khosla and S. K. Sharma, Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices, ACS Applied Electronic Materials, vol. 3 (7), pp. 2862-2897, 2021. for details view doi: 10.1021/acsaelm.0c00851

17. R. Khosla, D. Schwarz, H. S. Funk, K. Guguieva, and J. Schulze, High-quality Remote Plasma Enhanced Atomic Layer Deposition of Aluminum Oxide thin films for nanoelectronics applications, Solid State Electronics, vol. 185, pp. 108027, 2021. for details view doi: 10.1016/j.sse.2021.108027

16. S. Choudhary, D. Schwarz, H. S. Funk, R. Khosla, S. K. Sharma, and J. Schulze, “Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant Voltage Stress,” IEEE Transactions on Nanotechnology, vol. 20, pp. 346-355, 2021. for details view doi: 10.1109/TNANO.2021.3069820

15. M. Jangra, D. S. Arya, R. Khosla, and S. K. Sharma, “Maskless lithography: an approach to SU-8 based sensitive and high-g Z-axis polymer MEMS accelerometer”, Microsyst Technol, vol. 27, pp. 2925–2934, 2021. for details view doi: 10.1007/s00542-021-05217-0

14. P. P. Goswami, R. Khosla, and B. Bhowmick, “RF analysis and temperature characterisation of pocket doped L-shaped gate Tunnel FET,” Applied Physics A, vol. 125, pp. 733, 2019. for details view doi: 10.1007/s00339-019-3032-8

13. S. Sharma, S. Das, R. Khosla, H. Shrimali and S. K. Sharma, “Realization and Performance Analysis of Facile-Processed µ-IDE-Based Multilayer HfS2/HfO2 Transistors,” IEEE Transactions on Electron Devices, vol. 66, no. 7, pp. 3236-3241, 2019. for details view doi: 10.1109/TED.2019.2917323

12. S. Sharma, S. Das, R. Khosla, S. K. Sharma, and H. Shrimali, “Highly UV sensitive Sn Nanoparticles blended with polyaniline onto Micro-Interdigitated Electrode Array for UV-C detection applications,” Journal of Materials Science: Materials in Electronics, vol. 30, pp. 7534, 2019. for details view doi: 10.1007/s10854-019-01067-9

11. S. Sharma, R. Khosla, S. Das, H. Shrimali, and S. K. Sharma, “High Performance CSA-PANI based Organic Phototransistor by Elastomer Gratings,” Organic Electronics, vol. 57, pp. 14-20, 2018. for details view doi: 10.1016/j.orgel.2018.02.031

10. R. Khosla and S. K. Sharma, “Frequency Dispersion and Dielectric Relaxation in Post Deposition Annealed high-κ Erbium Oxide (Er2O3) Metal-Oxide-Semiconductor Capacitors,” Journal of Vacuum Science & Technology B, vol. 36, no. 1, pp. 012201, 2018. for details view doi: 10.1116/1.4995809

9. J. S. Malhotra, A. K. Singh, R. Khosla, S. K. Sharma, G. Sharma, and S. Kumar, “Investigations on structural, optical and magnetic properties of Fe and Dy co-doped ZnO nanoparticles,” Journal of Materials Science: Materials in Electronics, vol. 29, pp. 3850, 2017. for details view doi: 10.1007/s10854-017-8321-4

8. S. Sharma. R. Khosla, H. Shrimali, and S. K. Sharma, “Fluorine-Chlorine co-doped TiO2/CSA doped Polyaniline heterostructure for UV detection applications,” Sensor and Actuators A, vol. 261, pp. 94, 2017. for details view doi: 10.1016/j.sna.2017.04.043

7. P. Kumar, R. Khosla, M. Soni, D. Deva and S. K. Sharma, “A highly sensitive, flexible SERS sensor for Malachite green detection based on Ag decorated microstructured PDMS substrate fabricated from Taro leaf as template,” Sensors & Actuators B, vol. 246, pp. 477, 2017. for details view doi: doi.org/10.1016/j.snb.2017.01.202

6. R. Khosla, E. G. Rolseth, P. Kumar, S. S. Vadakupudhupalayam, S. K. Sharma and J. Schulze, “Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories,” IEEE Transactions on Device and Materials Reliability, vol. 17, no. 1, pp. 80-89, 2017. for details view doi: 10.1109/TDMR.2017.2659760

5. P. Kumar, R. Khosla, and S. K. Sharma, “Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology,” Surfaces and Interfaces, vol. 4, pp. 69, 2016. for details view doi: 10.1016/j.surfin.2016.08.003

4. M. Soni, T. Arora, R. Khosla, P. Kumar, A. Soni and S. K. Sharma, “Integration of Highly Sensitive Oxygenated Graphene With Aluminum Micro-Interdigitated Electrode Array Based Molecular Sensor for Detection of Aqueous Fluoride Anions,” IEEE Sensors Journal, vol. 16, no. 6, pp. 1524-1531, 2016. for details view doi: 10.1109/JSEN.2015.2505782

3. R. Khosla, P. Kumar, and S. K. Sharma, “Charge Trapping and Decay Mechanism in Post Deposition Annealed Er2O3 MOS Capacitors by Nanoscopic and Macroscopic Characterization,” IEEE Transactions on Device and Materials Reliability, vol.15, no.4, pp. 610-616, 2015. for details view doi: 10.1109/TDMR.2015.2498310

2. D. K. Sharma, R. Khosla, and S. K. Sharma, “Multilevel metal/Pb(Zr0.52Ti0.48)O3/TiOxNy/Si for next generation FeRAM technology node,” Solid-State Electronics, vol. 111, pp. 42, 2015. for details view doi: 10.1016/j.sse.2015.04.006

1. R. Khosla, D. K. Sharma, and S. K. Sharma, “Effect of electrical stress on Au/Pb(Zr0.52Ti0.48)O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistors,” Appl. Phys. Lett., vol. 105, pp. 152907, 2014. for details view doi: 10.1063/1.4897952


INTERNATIONAL CONFERENCES

8. S. P. Malik, A. K. Yadav, and R. Khosla, Design and Simulation of Si & Ge Double Gate Tunnel Field Effect Transistors with High-κ Al2O3 gate dielectric: DC and RF Analysis, In: Lenka T.R., Misra D., Biswas A. (eds) Micro and Nanoelectronics Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 781. Springer, Singapore.
 7. M. Jangra, D. S. Arya, R. Khosla, and S. K. Sharma, Design and Simulation of Capacitive Z-axis MEMS Accelerometers using SU-8, PolySi, Si3N4, and SiC based structural materials, IEEE 5th International Conference on Emerging Electronics (ICEE), IIT Delhi, Nov 2020.
6. R. Khosla and S. K. Sharma, Impact of Au/Al metal electrodes on Metal/PZT/TiOxNy/Si, MFIS structure for next-generation FeRAM, 3rd ISSC National Conference, ISRO – SCL Mohali, pp. 550, 2017.
5. P. Kumar, M. Soni, T. Arora, R. Khosla, and S. K. Sharma, Highly Sensitive SERS Sensors Based on Ag coated Self Assembled Colloidal Crystals for Detection of Contaminants in Water, International Conference on Materials Science & Technology (ICMST), Delhi University, India, March 2016.
4. B. Singh, R. Khosla, and S. Bala, “Implementation of Efficient Object Detection Algorithm on FPGA,” Advancements in Engineering, Technology and Management (AETM), Thailand, vol. 6, pp. 22, 2015.
3. D. K. Sharma, R. Khosla, and S. K. Sharma, “High performance Au/PZT/TiOxNy/Si MFIS structure for next generation ferroelectric memory applications,” AIP Conf. Proc., HPU Shimla, vol. 1661, pp. 060007, 2015.
2. R. Khosla, D. K. Sharma, and S. K. Sharma, “Reliability evaluation of erbium oxide thin films as gate dielectric for CMOS technology,” Int. Conf. on Multifunctional Materials, Structures, and Applications (ICMMSA), MNIT Allahabad, pp. 192, 2014.
1. R. Khosla and B. Singh, “Implementation of efficient image processing algorithm on FPGA,” IEEE Int. Conf. on Machine Intelligence Research and Advancement (ICMIRA)SMVDU, Jammu, pp. 335-339, 2013.

BOOKS/CHAPTERS

1. S. P. Malik, A. K. Yadav, and R. Khosla, Design and Simulation of Si & Ge Double Gate Tunnel Field Effect Transistors with High-κ Al2O3 gate dielectric: DC and RF Analysis, In: Lenka T.R., Misra D., Biswas A. (eds) Micro and Nanoelectronics Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 781. Springer, Singapore.


PROJECTS

  1. Integration of organic ferroelectric and two-dimensional (2D) material for High Mobility Flexible Ferroelectric Field Effect Transistor and Negative Capacitance Field-Effect Transistor Applications, SERB Startup Research Grant, PI: Dr. Robin Khosla, (2019 -21) ~INR 30 Lakhs (couldn’t avail due to overlap with Alexander von Humboldt fellowship for postdoctoral researchers on “High Mobility CMOS compatible Ferroelectric HfO2/GeSn based gate stack for non-volatile Ferroelectric Field-Effect Transistor applications”, Dr. Robin Khosla, AvH Host: Prof. Dr. -habil. Jeorg Schulze (2019-21) ~71,420 Euros)

 PROFESSIONAL MEMBERSHIPS

  • Fellow of Alexander von Humboldt Foundation
  • Member, IEEE
  • Member, IEEE Electron Device Society
  • Member, IEEE Nanotechnology Council

AWARDS AND RECOGNITIONS

  • Alexander von Humboldt Research Fellowship for Postdoctoral Researchers, Germany, 2018
  • Best Poster Award at The Research Fair Anusandhan’2014, Indian Institute of Technology (IIT), Mandi, Himachal Pradesh, 2014

ADMINISTRATIVE RESPONSIBILITIES

  • Department Infrastructure Committee (DIC) – Coordinator
  • Website Coordination Committee (WCC) – Co-Coordinator
  • Quality Assurance and Control Committee (QACC) – Co-Coordinator
  • Departmental Undergraduate Program Committee (DUPC) – Member
  • Industry Institute Coordination and Cooperation Committee (IICCC) – Member
  • Faculty mentor B.Tech. 2nd Year Student Group (2014001-2014068)

Ph.D. SCHOLARS GUIDED

  1. Ajeet Kumar Yadav (MHRD Fellowship, Ongoing)
  2. Srinivas Mattaparthi (MHRD Fellowship, Ongoing)
  3. Parasa Siva Durga Rao (Part time, Ongoing)
  4. Venkateswara Rao Busani (QIP, Joining soon)

M.TECH. SCHOLARS GUIDED

  1. Sambhu Prasad Malik [2022], Germanium Charge Plasma Double Gate Tunnel FET: Design and Simulation

B.TECH. PROJECTS

  1. Partha Pratim Goswami and Bhargav Doley [2019], Optimization of Pocket doped High-k dielectric Tunnel FET with back gate, IIT Hyderabad Ph.D.
  2. Anirban Roy [2019], Electromigration assessment of VLSI Power grid networks, 
  3. Rishiraj [2022], A Smart Agriculture System for Farm Environment Monitoring and Crop Selection IoT and ML, Ekacare, Bangalore
  4. Roseleen [2022], A Smart Agriculture System for Farm Environment Monitoring and Crop Selection IoT and ML, Bharat Electronics Limited (BEL)
  5. Amlan Borah [2022], A Smart Agriculture System for Farm Environment Monitoring and Crop Selection IoT and ML, Darwinbox, Hyderabad
  6. Dibyajyoti,  [2022], A Smart Agriculture System for Farm Environment Monitoring and Crop Selection IoT and ML, Samsung Research Institute, Bangalore
  7. Sunil, Ambarish, Sarath, Swapnil, Debadipto, Hiroj [2023] (Ongoing)